View source for US Patent Application 18329126. METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR simplified abstract

=METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR=


==Organization Name==

[[Taiwan Semiconductor Manufacturing Co., Ltd.]]


==Inventor(s)==

[[Lin-Yu Huang of Hsinchu (TW)]]


[[Li-Zhen Yu of New Taipei City (TW)]]


[[Chia-Hao Chang of Hsinchu City (TW)]]


[[Cheng-Chi Chuang of New Taipei City (TW)]]


[[Yu-Ming Lin of Hsinchu City (TW)]]


[[Chih-Hao Wang of Hsinchu County (TW)]]


==METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR - A simplified explanation of the abstract==


*This abstract for appeared for US patent application  number 18329126 Titled 'METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR'

==Simplified Explanation==

This abstract describes a device that includes various components such as a substrate, isolation structure, gate structure, gate spacer, source/drain region, silicide layer, and dielectric liner. These components are arranged in a specific way, with the dielectric liner positioned above the silicide layer but spaced away from it. The arrangement is described in relation to a cross-sectional plane perpendicular to the lengthwise direction of the gate structure.


==Original Abstract Submitted==

A device includes a substrate, an isolation structure over the substrate, a gate structure over the isolation structure, a gate spacer on a sidewall of the gate structure, a source/drain (S/D) region adjacent to the gate spacer, a silicide on the S/D region, a dielectric liner over a sidewall of the gate spacer and on a top surface of the isolation structure, wherein a bottom surface of the dielectric liner is above a top surface of the silicide layer and spaced away from the top surface of the silicide layer in a cross-sectional plane perpendicular to a lengthwise direction of the gate structure.