View source for US Patent Application 18230669. IN SITU AND TUNABLE DEPOSITION OF A FILM simplified abstract

=IN SITU AND TUNABLE DEPOSITION OF A FILM=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Chia-Hsi Wang of Changhua County (TW)|Chia-Hsi Wang of Changhua County (TW)]][[Category:Chia-Hsi Wang of Changhua County (TW)]]

[[:Category:Yen-Yu Chen of Taichung City (TW)|Yen-Yu Chen of Taichung City (TW)]][[Category:Yen-Yu Chen of Taichung City (TW)]]

[[:Category:Jen-Hao Chien of Taichung (TW)|Jen-Hao Chien of Taichung (TW)]][[Category:Jen-Hao Chien of Taichung (TW)]]

==IN SITU AND TUNABLE DEPOSITION OF A FILM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18230669 titled 'IN SITU AND TUNABLE DEPOSITION OF A FILM

==Simplified Explanation==

The abstract describes a method for depositing a film of boron-containing cobalt iron alloy (FeCoB) on a substrate using physical vapor deposition (PVD) technique. Here are the key points:

* The method involves introducing two PVD targets into a PVD system.
* The first target contains a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration.
* The second target contains boron.
* Parameters of the PVD system are determined based on a target boron concentration that is higher than the initial boron concentration.
* A film of FeCoB is deposited on a substrate using the determined parameters of the PVD system.


==Original Abstract Submitted==

A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.



[[Category:C23C14/54]]
[[Category:G01N23/2273]]
[[Category:C23C14/06]]
[[Category:C23C14/34]]
[[Category:C23C14/52]]
[[Category:C23C14/35]]
[[Category:H01J37/34]]