View source for US Patent Application 18224179. MANAGING SUB-BLOCK ERASE OPERATIONS IN A MEMORY SUB-SYSTEM simplified abstract

=MANAGING SUB-BLOCK ERASE OPERATIONS IN A MEMORY SUB-SYSTEM=


==Organization Name==

[[Micron Technology, Inc.]]


==Inventor(s)==

[[Kalyan Chakravarthy Kavalipurapu of Telangana (IN)]]

[[Tomoko Ogura Iwasaki of San Jose CA (US)]]

[[Erwin E. Yu of San Jose CA (US)]]

[[Hong-Yan Chen of San Jose CA (US)]]

[[Yunfei Xu of San Jose CA (US)]]

==MANAGING SUB-BLOCK ERASE OPERATIONS IN A MEMORY SUB-SYSTEM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18224179 titled 'MANAGING SUB-BLOCK ERASE OPERATIONS IN A MEMORY SUB-SYSTEM

==Simplified Explanation==

The abstract describes a processing device in a memory system that connects two data blocks in order to generate a combined data block.
* The connecting process involves creating a wordline connection between corresponding wordlines of the two data blocks.
* The wordlines are used to drive the data in the memory device.
* The connection is made using a single string driver, which simplifies the process.
* This innovation allows for the efficient combination of data from different blocks in a memory device.


==Original Abstract Submitted==

A processing device in a memory system connects a first data block of the memory device to a second data block of the memory device to generate a combined data block comprising a first plurality of sub-blocks of the first data block and a second plurality of sub-blocks of the second data block, wherein the connecting includes: for each wordline of a first plurality of wordlines of the first data block, creating a wordline connection short between the respective wordline of the first data block and a corresponding wordline of a second plurality of wordlines of the second data block, wherein the first plurality of wordlines and the second plurality of wordlines comprise data wordlines; and driving a first data wordline of the first data block and a second wordline of the second data block using a single string driver of the memory device.