View source for US Patent Application 18119388. PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE simplified abstract

=PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE=


==Organization Name==

[[Samsung Electronics Co., Ltd.]]


==Inventor(s)==

[[Jonghoon Kim of Suwon-si (KR)]]

[[Suk Koo Hong of Suwon-si (KR)]]

[[Young Gyu Kim of Gunpo-si (KR)]]

[[Jooyoung Song of Suwon-si (KR)]]

[[Hae Min Yang of Seoul (KR)]]

[[Gumhye Jeon of Suwon-si (KR)]]

[[Juhee Kim of Seoul (KR)]]

[[Sunah Lee of Seoul (KR)]]

[[Ahhyun Lee of Seoul (KR)]]

[[Hong Won Lee of Seoul (KR)]]

==PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18119388 titled 'PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE

==Simplified Explanation==

The patent application describes a photoresist composition used in forming patterns and a method of synthesizing 6-nitrochrysene. The photoresist composition includes several components such as a polymer resin, a photo acid generator, a quencher, an organic solvent, and an etching resistance enhancer. The etching resistance enhancer is represented by Chemical Formula 1.

* The patent application focuses on a photoresist composition used in forming patterns and a method of synthesizing 6-nitrochrysene.
* The photoresist composition includes a polymer resin, a photo acid generator, a quencher, an organic solvent, and an etching resistance enhancer.
* The etching resistance enhancer is represented by Chemical Formula 1.
* The invention aims to improve the etching resistance of the photoresist composition.
* The method of synthesizing 6-nitrochrysene is also disclosed in the patent application.
* The patent application provides a detailed description of the chemical components and their proportions in the photoresist composition.
* The invention may have applications in various industries such as semiconductor manufacturing and lithography.


==Original Abstract Submitted==

A photoresist composition, a method of forming a pattern, and a method of synthesizing 6-nitrochrysene, the photoresist composition includes a polymer resin; a photo acid generator; a quencher; an organic solvent; and an etching resistance enhancer, wherein the etching resistance enhancer is represented by the following Chemical Formula 1,