View source for US Patent Application 17991365. MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE simplified abstract

=MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Byung In Lee of Icheon-si Gyeonggi-do (KR)|Byung In Lee of Icheon-si Gyeonggi-do (KR)]][[Category:Byung In Lee of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Eun Mee Kwon of Icheon-si Gyeonggi-do (KR)|Eun Mee Kwon of Icheon-si Gyeonggi-do (KR)]][[Category:Eun Mee Kwon of Icheon-si Gyeonggi-do (KR)]]

[[:Category:In Su Park of Icheon-si Gyeonggi-do (KR)|In Su Park of Icheon-si Gyeonggi-do (KR)]][[Category:In Su Park of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Hyung Jun Yang of Icheon-si Gyeonggi-do (KR)|Hyung Jun Yang of Icheon-si Gyeonggi-do (KR)]][[Category:Hyung Jun Yang of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Sang Heon Lee of Icheon-si Gyeonggi-do (KR)|Sang Heon Lee of Icheon-si Gyeonggi-do (KR)]][[Category:Sang Heon Lee of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Sung Jae Chung of Icheon-si Gyeonggi-do (KR)|Sung Jae Chung of Icheon-si Gyeonggi-do (KR)]][[Category:Sung Jae Chung of Icheon-si Gyeonggi-do (KR)]]

==MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17991365 titled 'MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE

==Simplified Explanation==

The present disclosure is about a memory device and its manufacturing method.
* The memory device has a stacked structure with gate lines that are separated and stacked on top of each other.
* It also includes a main plug that is formed vertically to the stacked structure.
* A plug separation pattern is used to divide the main plug into first and second sub-plugs.
* There is a gap in the plug separation pattern.
* A separation layer surrounds the gap.


==Original Abstract Submitted==

The present disclosure relates to a memory device and a manufacturing method of the memory device. The memory device according to an embodiment includes a stacked structure including gate lines separated from and stacked on top of each other, a main plug formed in a vertical direction to the stacked structure, a plug separation pattern separating the main plug into first and second sub-plugs, a gap formed in the plug separation pattern; and a separation layer surrounding the gap.



[[Category:H01L29/76]]