View source for US Patent Application 17825480. METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE simplified abstract

=METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE=


==Organization Name==

[[:Category:NANYA TECHNOLOGY CORPORATION|NANYA TECHNOLOGY CORPORATION]]


[[Category:NANYA TECHNOLOGY CORPORATION]]

==Inventor(s)==

[[:Category:YIN-FA Chen of NEW TAIPEI CITY (TW)|YIN-FA Chen of NEW TAIPEI CITY (TW)]][[Category:YIN-FA Chen of NEW TAIPEI CITY (TW)]]

[[:Category:JUI-HSIU Jao of TAOYUAN CITY (TW)|JUI-HSIU Jao of TAOYUAN CITY (TW)]][[Category:JUI-HSIU Jao of TAOYUAN CITY (TW)]]

==METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17825480 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH PROGRAMMBLE FEATURE

==Simplified Explanation==

- The patent application describes a method of manufacturing a semiconductor device.
- The method involves using a substrate with two islands, where the second island is larger than the first island.
- An insulative layer is deposited to cover the substrate.
- A conductive feature is formed that penetrates through the insulative layer and makes contact with the second island.
- A conductive line is then formed on top of the insulative layer and connected to the conductive feature.

* The method aims to provide a manufacturing process for semiconductor devices.
* The use of two islands on the substrate allows for different areas and sizes.
* The insulative layer serves as a protective covering for the substrate.
* The conductive feature provides a connection to the larger second island.
* The conductive line allows for electrical connectivity in the semiconductor device.


==Original Abstract Submitted==

The present application provides a method of manufacturing a semiconductor device. The method includes steps of providing a substrate comprising a first island and a second island, wherein the first island has a first area and the second island has a second area greater than the first area; depositing an insulative layer to cover the substrate; forming a conductive feature penetrating through the insulative layer and contacting the second island; and forming a conductive line on the insulative layer and connected to the conductive feature.



[[Category:H01L27/108]]