View source for Taiwan semiconductor manufacturing company, ltd. (20240112959). Multi-Gate Device And Related Methods simplified abstract

=Multi-Gate Device And Related Methods=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Kuan-Ting Pan of Taipei City (TW)|Kuan-Ting Pan of Taipei City (TW)]][[Category:Kuan-Ting Pan of Taipei City (TW)]]

[[:Category:Zhi-Chang Lin of Hsinchu County (TW)|Zhi-Chang Lin of Hsinchu County (TW)]][[Category:Zhi-Chang Lin of Hsinchu County (TW)]]

[[:Category:Yi-Ruei Jhan of Keelung City (TW)|Yi-Ruei Jhan of Keelung City (TW)]][[Category:Yi-Ruei Jhan of Keelung City (TW)]]

[[:Category:Chi-Hao Wang of Hsinchu County (TW)|Chi-Hao Wang of Hsinchu County (TW)]][[Category:Chi-Hao Wang of Hsinchu County (TW)]]

[[:Category:Huan-Chieh Su of Changhua County (TW)|Huan-Chieh Su of Changhua County (TW)]][[Category:Huan-Chieh Su of Changhua County (TW)]]

[[:Category:Shi Ning Ju of Hsinchu City (TW)|Shi Ning Ju of Hsinchu City (TW)]][[Category:Shi Ning Ju of Hsinchu City (TW)]]

[[:Category:Kuo-Cheng Chiang of Hsinchu County (TW)|Kuo-Cheng Chiang of Hsinchu County (TW)]][[Category:Kuo-Cheng Chiang of Hsinchu County (TW)]]

==Multi-Gate Device And Related Methods - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240112959 titled 'Multi-Gate Device And Related Methods

==Simplified Explanation==

The method described in the abstract involves fabricating a device by forming a dummy gate over a plurality of fins, removing portions of the dummy gate to create trenches, filling the trenches with dielectric material and metal layer, and etching-back the metal layer to achieve specific dimensions.

* Formation of dummy gate over fins
* Removal of portions of dummy gate to create trenches
* Filling trenches with dielectric material and metal layer
* Etching-back of metal layer to achieve desired dimensions

== Potential Applications ==
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, particularly in the fabrication of transistors with hybrid fin structures.

== Problems Solved ==
This technology addresses the challenge of precise and controlled fabrication of semiconductor devices with complex fin structures, ensuring optimal performance and efficiency.

== Benefits ==
The benefits of this technology include improved device performance, enhanced efficiency, and the ability to create advanced semiconductor devices with intricate fin structures.

== Potential Commercial Applications ==
The potential commercial applications of this technology include the production of high-performance processors, memory chips, and other semiconductor devices for various electronic applications.

== Possible Prior Art ==
One possible prior art related to this technology is the use of dummy gates in semiconductor fabrication processes to create precise structures and enhance device performance.

=== Unanswered Questions ===

=== How does this technology compare to existing methods for fabricating semiconductor devices with hybrid fin structures? ===
This article does not provide a direct comparison between this technology and existing methods for fabricating semiconductor devices with hybrid fin structures. 

=== What are the specific dimensions and materials used in the fabrication process described in the patent application? ===
The article does not specify the exact dimensions and materials used in the fabrication process described in the patent application.


==Original Abstract Submitted==

a method of fabricating a device includes forming a dummy gate over a plurality of fins. thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. the method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. the method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.



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