View source for Taiwan semiconductor manufacturing company, ltd. (20240105462). FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS simplified abstract

=FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Yi-Hsiu Chen of Hsinchu (TW)|Yi-Hsiu Chen of Hsinchu (TW)]][[Category:Yi-Hsiu Chen of Hsinchu (TW)]]

[[:Category:Kenichi Sano of Hsinchu (TW)|Kenichi Sano of Hsinchu (TW)]][[Category:Kenichi Sano of Hsinchu (TW)]]

==FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105462 titled 'FORMATION OF SELF-ASSEMBLED MONOLAYER FOR SELECTIVE ETCHING PROCESS

==Simplified Explanation==

The patent application describes a selective etching process for a semiconductor device using a self-assembled monolayer-forming compound to protect certain dielectric regions while etching others with a dilute acid solution.

* Self-assembled monolayer-forming compound is used to selectively cover the first dielectric region.
* Second dielectric region is exposed by the self-assembled monolayer.
* Dilute acid solution is used to etch the second dielectric region while protecting the first dielectric region.

== Potential Applications ==
The technology can be applied in semiconductor manufacturing processes where selective etching is required to create intricate patterns on the device.

== Problems Solved ==
This technology solves the problem of accurately etching specific regions of a semiconductor device without affecting other areas, leading to improved device performance and reliability.

== Benefits ==
The benefits of this technology include precise control over the etching process, reduced risk of damage to the device, and increased efficiency in semiconductor manufacturing.

== Potential Commercial Applications ==
One potential commercial application of this technology is in the production of advanced semiconductor devices for electronics, telecommunications, and other high-tech industries.

== Possible Prior Art ==
Prior art may include similar processes using different materials or techniques for selective etching in semiconductor devices.

=== Unanswered Questions ===

=== How does this technology compare to other selective etching methods in terms of efficiency and precision? ===
This article does not provide a direct comparison with other selective etching methods, leaving the reader to wonder about the relative advantages and disadvantages of this technology.

=== What are the limitations of using a self-assembled monolayer-forming compound in the etching process? ===
The article does not address any potential limitations or challenges associated with using a self-assembled monolayer-forming compound, leaving room for further exploration into this aspect of the technology.


==Original Abstract Submitted==

a selective etching process includes treating a first dielectric region and a second dielectric region of a semiconductor device with a self-assembled-monolayer-forming compound to form a self-assembled monolayer to selectively cover the first dielectric region so as to expose the second dielectric region; and selectively etching the second dielectric region using a dilute acid solution while the first dielectric region is protected by the self-assembled monolayer from being etched by the dilute acid solution.



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