View source for Taiwan semiconductor manufacturing co., ltd. (20240099151). SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract

=SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Yi Yang of Fremont CA (US)|Yi Yang of Fremont CA (US)]][[Category:Yi Yang of Fremont CA (US)]]

[[:Category:Dongna Shen of San Jose CA (US)|Dongna Shen of San Jose CA (US)]][[Category:Dongna Shen of San Jose CA (US)]]

[[:Category:Yu-Jen Wang of San Jose CA (US)|Yu-Jen Wang of San Jose CA (US)]][[Category:Yu-Jen Wang of San Jose CA (US)]]

==SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240099151 titled 'SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE

==Simplified Explanation==

The patent application describes a method for fabricating a sub-30 nm conductive via on a bottom electrode, followed by the deposition of a second conductive layer to form a T-shaped bottom electrode for magnetic tunnel junction (MTJ) stacks. 

* Patterning and trimming of a first conductive layer to create a sub-30 nm conductive via on a bottom electrode
* Encapsulating the conductive via with a dielectric layer and planarizing to expose the top surface
* Depositing a second conductive layer over the first dielectric layer and the conductive via
* Patterning the second conductive layer to form a sub-60 nm second conductive layer, creating a T-shaped bottom electrode
* Depositing MTJ stacks on the T-shaped second bottom electrode and the first bottom electrode
* Depositing a second dielectric layer over the MTJ stacks and planarizing to expose the top surface of the MTJ stack on the T-shaped second bottom electrode
* Connecting a top electrode to the MTJ stack on the T-shaped second bottom electrode plug

== Potential Applications ==
This technology could be applied in the development of advanced memory devices, such as magnetic random-access memory (MRAM) and spin-transfer torque random-access memory (STT-RAM).

== Problems Solved ==
This technology solves the challenge of fabricating sub-30 nm conductive vias and sub-60 nm second conductive layers for MTJ stacks, enabling the production of high-density and high-performance memory devices.

== Benefits ==
The benefits of this technology include improved memory device performance, increased memory density, and enhanced reliability due to the precise fabrication of sub-30 nm conductive vias and sub-60 nm second conductive layers.

== Potential Commercial Applications ==
* "Advanced Memory Device Fabrication Using Sub-30 nm Conductive Vias and Sub-60 nm Second Conductive Layers"

== Possible Prior Art ==
One possible prior art for this technology could be the fabrication methods for sub-30 nm conductive vias and sub-60 nm conductive layers in semiconductor devices.

=== Unanswered Questions ===

=== How does this technology compare to existing methods for fabricating memory devices? ===
This technology offers a more precise and efficient method for fabricating high-density memory devices, but further comparison studies with existing methods are needed to evaluate its advantages.

=== What are the potential challenges in scaling up this fabrication process for mass production? ===
Scaling up this fabrication process for mass production may face challenges related to cost, yield, and process stability. Further research and development are required to address these challenges.


==Original Abstract Submitted==

a first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a first bottom electrode. the conductive via is encapsulated with a first dielectric layer and planarized to expose a top surface of the conductive via. a second conductive layer is deposited over the first dielectric layer and the conductive via. the second conductive layer is patterned to form a sub 60 nm second conductive layer wherein the conductive via and second conductive layer together form a t-shaped second bottom electrode. mtj stacks are deposited on the t-shaped second bottom electrode and on the first bottom electrode wherein the mtj stacks are discontinuous. a second dielectric layer is deposited over the mtj stacks and planarized to expose a top surface of the mtj stack on the t-shaped second bottom electrode. a top electrode contacts the mtj stack on the t-shaped second bottom electrode plug.



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