View source for Taiwan semiconductor manufacturing co., ltd. (20240096701). DEVICE WITH THROUGH VIA AND RELATED METHODS simplified abstract

=DEVICE WITH THROUGH VIA AND RELATED METHODS=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Chun-Yuan Chen of Hsinchu (TW)|Chun-Yuan Chen of Hsinchu (TW)]][[Category:Chun-Yuan Chen of Hsinchu (TW)]]

[[:Category:Huan-Chieh Su of Hsinchu (TW)|Huan-Chieh Su of Hsinchu (TW)]][[Category:Huan-Chieh Su of Hsinchu (TW)]]

[[:Category:Ching-Wei Tsai of Hsinchu (TW)|Ching-Wei Tsai of Hsinchu (TW)]][[Category:Ching-Wei Tsai of Hsinchu (TW)]]

[[:Category:Shang-Wen Chang of Hsinchu (TW)|Shang-Wen Chang of Hsinchu (TW)]][[Category:Shang-Wen Chang of Hsinchu (TW)]]

[[:Category:Yi-Hsun Chiu of Hsinchu (TW)|Yi-Hsun Chiu of Hsinchu (TW)]][[Category:Yi-Hsun Chiu of Hsinchu (TW)]]

[[:Category:Chih-Hao Wang of Hsinchu (TW)|Chih-Hao Wang of Hsinchu (TW)]][[Category:Chih-Hao Wang of Hsinchu (TW)]]

==DEVICE WITH THROUGH VIA AND RELATED METHODS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240096701 titled 'DEVICE WITH THROUGH VIA AND RELATED METHODS

==Simplified Explanation==

The patent application describes a device with a stack of semiconductor nanostructures, a gate structure, a source/drain region, a contact structure, a backside conductive trace, a first through via, and a gate isolation structure.

* The device includes a stack of semiconductor nanostructures.
* The gate structure wraps around the semiconductor nanostructures and extends in a first direction.
* The source/drain region abuts the gate structure and the stack in a second direction transverse to the first direction.
* A contact structure is located on the source/drain region.
* A backside conductive trace is positioned under the stack, extending in the second direction.
* A first through via extends vertically from the contact structure to the top surface of the backside dielectric layer.
* A gate isolation structure abuts the first through via in the second direction.

== Potential Applications ==
This technology could be applied in:
* Advanced semiconductor devices
* Nanotechnology research

== Problems Solved ==
This technology helps in:
* Enhancing device performance
* Improving integration of components

== Benefits ==
The benefits of this technology include:
* Increased efficiency
* Enhanced functionality

== Potential Commercial Applications ==
This technology could be used in:
* Electronics industry
* Semiconductor manufacturing

== Possible Prior Art ==
Prior art related to this technology includes:
* Semiconductor device structures with similar configurations
* Previous patents on nanostructure integration

== Unanswered Questions ==
=== How does this technology compare to existing semiconductor devices in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

=== What specific industries or research fields could benefit the most from this technology? ===
The article does not specify which industries or research fields could benefit the most from the application of this technology.


==Original Abstract Submitted==

a device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.



[[Category:H01L21/768]]
[[Category:H01L23/48]]
[[Category:H01L29/40]]
[[Category:H01L29/417]]
[[Category:H01L29/66]]