View source for International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract

=HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Kangguo Cheng of Schenectady NY (US)|Kangguo Cheng of Schenectady NY (US)]][[Category:Kangguo Cheng of Schenectady NY (US)]]

[[:Category:Andrew M. Greene of Slingerlands NY (US)|Andrew M. Greene of Slingerlands NY (US)]][[Category:Andrew M. Greene of Slingerlands NY (US)]]

[[:Category:Sung Dae Suk of Watervliet NY (US)|Sung Dae Suk of Watervliet NY (US)]][[Category:Sung Dae Suk of Watervliet NY (US)]]

==HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240113213 titled 'HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a channel region of stacked semiconductor layers arranged in clusters, with a pair of semiconductor sheets and a dielectric material between them. A gate structure encapsulates the channel region, and source and drain regions are present on opposing sides of the channel region.

* The semiconductor device includes a unique design with stacked semiconductor layers arranged in clusters, enhancing performance and efficiency.
* The presence of a dielectric material between the semiconductor sheets helps in controlling the flow of current through the device.
* The gate structure encapsulating the channel region provides stability and protection to the semiconductor layers.
* The source and drain regions on opposing sides of the channel region facilitate the flow of current through the device.

== Potential Applications ==
The technology described in the patent application could be applied in:
* Advanced electronic devices
* High-performance computing systems
* Power management applications

== Problems Solved ==
This technology helps in:
* Improving the efficiency of semiconductor devices
* Enhancing the performance of electronic systems
* Controlling the flow of current in a more precise manner

== Benefits ==
The benefits of this technology include:
* Increased efficiency and performance
* Better control over current flow
* Enhanced stability and reliability of electronic devices

== Potential Commercial Applications ==
The technology could find commercial applications in:
* Semiconductor manufacturing industry
* Electronics and consumer electronics sector
* Research and development for advanced technologies

== Possible Prior Art ==
One possible prior art could be the use of stacked semiconductor layers in electronic devices, but the specific arrangement in clusters with a dielectric material between the sheets may be a novel aspect of this technology.

=== Unanswered Questions ===

=== How does this technology compare to traditional semiconductor devices in terms of performance and efficiency? ===
This article does not provide a direct comparison between this technology and traditional semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to address this question.

=== What are the potential challenges in implementing this technology on a larger scale for commercial applications? ===
The article does not discuss the potential challenges in implementing this technology on a larger scale for commercial applications. Factors such as cost, scalability, and compatibility with existing systems could be important considerations.


==Original Abstract Submitted==

a semiconductor device including a channel region of stacked semiconductor layers arranged in at least one cluster, wherein each cluster includes a pair of the semiconductor sheets with a dielectric material present therebetween. the semiconductor device further includes a gate structure encapsulating the channel region of stacked semiconductor sheets arranged in clusters. source and drain regions are present on opposing sides of the channel region.



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