View source for International business machines corporation (20240113200). INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract

=INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:HUIMEI Zhou of ALBANY NY (US)|HUIMEI Zhou of ALBANY NY (US)]][[Category:HUIMEI Zhou of ALBANY NY (US)]]

[[:Category:MIAOMIAO Wang of ALBANY NY (US)|MIAOMIAO Wang of ALBANY NY (US)]][[Category:MIAOMIAO Wang of ALBANY NY (US)]]

[[:Category:Julien Frougier of ALBANY NY (US)|Julien Frougier of ALBANY NY (US)]][[Category:Julien Frougier of ALBANY NY (US)]]

[[:Category:Andrew M. Greene of Slingerlands NY (US)|Andrew M. Greene of Slingerlands NY (US)]][[Category:Andrew M. Greene of Slingerlands NY (US)]]

[[:Category:Barry Paul Linder of Hastings-on-Hudson NY (US)|Barry Paul Linder of Hastings-on-Hudson NY (US)]][[Category:Barry Paul Linder of Hastings-on-Hudson NY (US)]]

[[:Category:Kai Zhao of ALBANY NY (US)|Kai Zhao of ALBANY NY (US)]][[Category:Kai Zhao of ALBANY NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Tian Shen of San Jose CA (US)|Tian Shen of San Jose CA (US)]][[Category:Tian Shen of San Jose CA (US)]]

[[:Category:Veeraraghavan S. Basker of Fremont CA (US)|Veeraraghavan S. Basker of Fremont CA (US)]][[Category:Veeraraghavan S. Basker of Fremont CA (US)]]

==INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240113200 titled 'INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

==Simplified Explanation==

The integrated circuit apparatus described in the patent application includes a well contact with source/drain structures, a metal vertical portion, inner spacers, bottom dielectric isolation, and a well portion embedded in the substrate.

* The well contact consists of first and second source/drain structures on the substrate.
* A metal vertical portion connects the substrate between the source/drain structures.
* Inner spacers insulate the vertical portion from the adjacent source/drain structures.
* Bottom dielectric isolation electrically insulates the source/drain structures from the substrate.
* The well portion, differently doped than the substrate, is embedded in the substrate in alignment with the vertical portion.

== Potential Applications ==
This technology could be applied in the manufacturing of advanced integrated circuits, such as in high-performance computing, telecommunications, and consumer electronics.

== Problems Solved ==
This innovation helps in improving the performance and efficiency of integrated circuits by enhancing the electrical connections and isolation between different components on the substrate.

== Benefits ==
The integrated circuit apparatus offers better electrical connectivity, reduced interference, and improved overall functionality of electronic devices.

== Potential Commercial Applications ==
The technology can be utilized in the production of cutting-edge semiconductor devices for various industries, including automotive, aerospace, and medical equipment.

== Possible Prior Art ==
Prior art in the field of semiconductor manufacturing may include similar techniques for creating well contacts and source/drain structures on substrates, but the specific combination of features described in this patent application may be novel.

=== Unanswered Questions ===

=== How does this technology compare to existing well contact designs in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing well contact designs in terms of performance and efficiency. Further research or testing may be needed to evaluate the advantages of this technology over current solutions.

=== What are the potential limitations or challenges in implementing this integrated circuit apparatus on a large scale? ===
The article does not address potential limitations or challenges in implementing this technology on a large scale. Factors such as manufacturing costs, scalability, and compatibility with existing processes could be important considerations that need to be explored further.


==Original Abstract Submitted==

an integrated circuit apparatus includes a substrate and a well contact that is disposed on the substrate. the well contact includes first and second source/drain structures that are disposed on the substrate; a metal vertical portion that contacts the substrate immediately between the first and second source/drain structures; inner spacers that electrically insulate the vertical portion from the adjacent source/drain structures; bottom dielectric isolation that electrically insulates the source/drain structures from the substrate; and a well portion that is embedded into the substrate in registry with the vertical portion. the well portion is doped differently than the substrate.



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