View source for International business machines corporation (20240113193). BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract

=BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:Tao Li of Slingerlands NY (US)|Tao Li of Slingerlands NY (US)]][[Category:Tao Li of Slingerlands NY (US)]]

[[:Category:Shogo Mochizuki of Mechanicville NY (US)|Shogo Mochizuki of Mechanicville NY (US)]][[Category:Shogo Mochizuki of Mechanicville NY (US)]]

[[:Category:Kisik Choi of Watervliet NY (US)|Kisik Choi of Watervliet NY (US)]][[Category:Kisik Choi of Watervliet NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

==BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240113193 titled 'BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL

==Simplified Explanation==

The semiconductor structure described in the patent application includes a first source-drain region, a second source-drain region, at least one channel region connecting the two source-drain regions, and a gate adjacent to the channel region. A bottom dielectric isolation region is positioned inward of the gate, with first and second bottom silicon regions located inward of the first and second source-drain regions. A back side contact extends through the second bottom silicon region into the second source-drain region.

* First source-drain region
* Second source-drain region
* Channel region connecting the two source-drain regions
* Gate adjacent to the channel region
* Bottom dielectric isolation region
* First and second bottom silicon regions
* Back side contact extending through the second bottom silicon region

== Potential Applications ==
The technology described in this patent application could be applied in the development of advanced semiconductor devices, such as transistors and integrated circuits.

== Problems Solved ==
This technology addresses the need for improved performance and efficiency in semiconductor structures by optimizing the layout and design of key components.

== Benefits ==
- Enhanced functionality and performance of semiconductor devices
- Increased efficiency and reliability
- Potential for miniaturization and cost reduction in device manufacturing processes

== Potential Commercial Applications ==
Optimizing semiconductor structures for improved performance and efficiency could have applications in various industries, including electronics, telecommunications, and computing.

== Possible Prior Art ==
One possible prior art in this field could be the development of similar semiconductor structures with different configurations or materials, aimed at achieving similar performance enhancements.

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor structures in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing semiconductor structures to evaluate the advantages and limitations of the proposed innovation.

=== What are the potential challenges or limitations of implementing this technology in practical applications? ===
The article does not address the potential obstacles or constraints that may arise when integrating this technology into real-world semiconductor devices and manufacturing processes.


==Original Abstract Submitted==

a semiconductor structure includes a first source-drain region; a second source-drain region; at least one channel region coupling the first and second source-drain regions; and a gate adjacent the at least one channel region. a bottom dielectric isolation region is located inward of the gate. first and second bottom silicon regions are respectively located inward of the first and second source-drain regions. a back side contact projects through the second bottom silicon region into the second source-drain region.



[[Category:H01L29/423]]
[[Category:H01L21/8234]]
[[Category:H01L23/528]]
[[Category:H01L29/06]]
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