View source for International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract

=VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:Brent A. Anderson of Jericho VT (US)|Brent A. Anderson of Jericho VT (US)]][[Category:Brent A. Anderson of Jericho VT (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)|Nicholas Anthony Lanzillo of Wynantskill NY (US)]][[Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)]]

[[:Category:Albert M. Chu of Nashua NH (US)|Albert M. Chu of Nashua NH (US)]][[Category:Albert M. Chu of Nashua NH (US)]]

[[:Category:Lawrence A. Clevenger of Saratoga Springs NY (US)|Lawrence A. Clevenger of Saratoga Springs NY (US)]][[Category:Lawrence A. Clevenger of Saratoga Springs NY (US)]]

[[:Category:REINALDO Vega of Mahopac NY (US)|REINALDO Vega of Mahopac NY (US)]][[Category:REINALDO Vega of Mahopac NY (US)]]

==VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240113178 titled 'VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS

==Simplified Explanation==

The abstract describes a semiconductor device with a top source/drain structure on a semiconductor channel and a bottom source/drain structure under the channel, consisting of a doped semiconductor part and a conductor part covering the bottom surface of the doped semiconductor part.

* The semiconductor device includes a semiconductor channel, a top source/drain structure, and a bottom source/drain structure.
* The bottom source/drain structure comprises a doped semiconductor part and a conductor part covering the bottom surface of the doped semiconductor part.

== Potential Applications ==
This technology could be applied in:
* Semiconductor manufacturing
* Electronics industry

== Problems Solved ==
This technology helps in:
* Enhancing the performance of semiconductor devices
* Improving conductivity and efficiency

== Benefits ==
The benefits of this technology include:
* Increased efficiency
* Enhanced conductivity
* Improved overall performance of semiconductor devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Integrated circuits
* Microprocessors

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous patents related to semiconductor device structures

=== Unanswered Questions ===

=== Question 1: ===
What specific materials are used in the doped semiconductor part and the conductor part of the bottom source/drain structure?

=== Answer: ===
The abstract does not provide specific details about the materials used in the doped semiconductor part and the conductor part. Further information from the full patent application would be needed to answer this question.

=== Question 2: ===
How does the bottom source/drain structure contribute to the overall performance of the semiconductor device?

=== Answer: ===
The abstract mentions that the bottom source/drain structure includes a doped semiconductor part and a conductor part, but it does not elaborate on how this structure specifically enhances the performance of the semiconductor device. Further details from the full patent application would be required to address this question.


==Original Abstract Submitted==

semiconductor device and methods of forming the same include a semiconductor channel. a top source/drain structure is on the semiconductor channel. a bottom source/drain structure is under the semiconductor channel. the bottom source/drain structure includes a doped semiconductor part and a conductor part, with the conductor part covering a bottom surface of the doped semiconductor part.



[[Category:H01L29/417]]
[[Category:H01L21/285]]
[[Category:H01L29/40]]
[[Category:H01L29/45]]
[[Category:H01L29/66]]
[[Category:H01L29/78]]