View source for Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract

=SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Abhishek Anil Sharma of Portland OR (US)|Abhishek Anil Sharma of Portland OR (US)]][[Category:Abhishek Anil Sharma of Portland OR (US)]]

[[:Category:Wilfred Gomes of Portland OR (US)|Wilfred Gomes of Portland OR (US)]][[Category:Wilfred Gomes of Portland OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

[[:Category:Anand Murthy of Portland OR (US)|Anand Murthy of Portland OR (US)]][[Category:Anand Murthy of Portland OR (US)]]

[[:Category:Sagar Suthram of Portland OR (US)|Sagar Suthram of Portland OR (US)]][[Category:Sagar Suthram of Portland OR (US)]]

[[:Category:Pushkar Ranade of San Jose CA (US)|Pushkar Ranade of San Jose CA (US)]][[Category:Pushkar Ranade of San Jose CA (US)]]

==SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105635 titled 'SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS

==Simplified Explanation==

The abstract describes an integrated circuit (IC) die with conductive structures, a self-alignment layer, and conductive vias.

* The IC die includes a first layer with conductive structures in an interlayer dielectric (ILD) material.
* A self-alignment layer is in contact with non-conductive regions at the first surface of the first layer.
* A second layer with ILD material is in contact with the self-alignment layer and the conductive structures.
* Conductive vias pass through the self-alignment layer and the second layer, in contact with the conductive structures.

== Potential Applications ==
This technology could be applied in the manufacturing of advanced integrated circuits, such as microprocessors, memory chips, and other semiconductor devices.

== Problems Solved ==
This technology helps in achieving precise alignment of conductive structures and vias, improving the performance and reliability of the integrated circuit.

== Benefits ==
The self-alignment layer simplifies the manufacturing process, reduces production costs, and enhances the overall quality of the IC die.

== Potential Commercial Applications ==
"Advanced Integrated Circuit Die with Self-Alignment Layer: Commercial Applications"

== Possible Prior Art ==
There may be prior art related to self-alignment techniques in semiconductor manufacturing processes, but specific examples are not provided in the abstract.

== Unanswered Questions ==

=== How does the self-alignment layer improve the performance of the integrated circuit? ===
The abstract mentions the benefits of the self-alignment layer, but it does not elaborate on how exactly it enhances the performance of the IC die.

=== Are there any limitations or challenges associated with the use of self-alignment layers in integrated circuit manufacturing? ===
While the abstract highlights the advantages of the self-alignment layer, it does not mention any potential drawbacks or obstacles that may arise when implementing this technology.


==Original Abstract Submitted==

an integrated circuit (ic) die includes a first layer with conductive structures formed in a interlayer dielectric (ild) material, with a portion of the conductive structures at a first surface of the first layer, a self-alignment layer in contact with non-conductive regions at the first surface of the first layer, a second layer with ild material in contact with the self-alignment layer and the portion of the conductive structures at the first surface of the first layer, and conductive vias through the self-alignment layer and the second layer in contact with the portion of the conductive structures at the first surface of the first layer. the self-alignment layer may include a first material where the self-alignment layer is in contact with the conductive vias and a second material where the self-alignment layer is not in contact with the conductive vias. other embodiments are disclosed and claimed.



[[Category:H01L23/544]]
[[Category:H01L21/02]]
[[Category:H01L21/306]]
[[Category:H01L21/3205]]
[[Category:H01L23/48]]
[[Category:H01L23/532]]