View source for 20240055487. SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD simplified abstract (National Central University)

=SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD=


==Organization Name==

[[:Category:National Central University|National Central University]]


[[Category:National Central University]]

==Inventor(s)==

[[:Category:Tien-Hsi Lee of Tao-Yuan City (TW)|Tien-Hsi Lee of Tao-Yuan City (TW)]][[Category:Tien-Hsi Lee of Tao-Yuan City (TW)]]

[[:Category:Jun-Huang Wu of Tao-Yuan City (TW)|Jun-Huang Wu of Tao-Yuan City (TW)]][[Category:Jun-Huang Wu of Tao-Yuan City (TW)]]

[[:Category:Yu-Sheng Chiou of Tao-Yuan City (TW)|Yu-Sheng Chiou of Tao-Yuan City (TW)]][[Category:Yu-Sheng Chiou of Tao-Yuan City (TW)]]

[[:Category:Shu-Cheng Li of Tao-Yuan City (TW)|Shu-Cheng Li of Tao-Yuan City (TW)]][[Category:Shu-Cheng Li of Tao-Yuan City (TW)]]

[[:Category:Wei-Chi Huang of Tao-Yuan City (TW)|Wei-Chi Huang of Tao-Yuan City (TW)]][[Category:Wei-Chi Huang of Tao-Yuan City (TW)]]

[[:Category:Yu-Tang Lin of Tao-Yuan City (TW)|Yu-Tang Lin of Tao-Yuan City (TW)]][[Category:Yu-Tang Lin of Tao-Yuan City (TW)]]

==SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240055487 titled 'SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD

==Simplified Explanation==

The substrate processing method involves:
* Providing a substrate with a predetermined area and a predetermined reaction part extending from the surface towards the bottom surface.
* Performing an anodization reaction on the predetermined reaction part to convert it into a weakened layer.
* Removing the weakened layer to expose the surface of the substrate in the predetermined area.

Potential applications of this technology:
* Surface modification of substrates for various industries such as electronics, optics, and medical devices.

Problems solved by this technology:
* Providing a controlled method for modifying the surface properties of substrates.

Benefits of this technology:
* Allows for precise and controlled modification of substrate surfaces.
* Enables the creation of weakened layers for specific applications.


==Original Abstract Submitted==

a substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermined reaction part, and the predetermined reaction part extends from the surface toward the bottom surface of the substrate; performing a anodization reaction on the predetermined reaction part by an electrochemical method to convert the predetermined reaction part into a weakened layer, wherein the weakened layer has a thickness; and removing the weakened layer so that the substrate in the predetermined area has an exposed surface.



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