View source for 20240049464. VERTICAL SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF simplified abstract (SK hynix Inc.)

=VERTICAL SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Eun-Ho Kim of Suwon (KR)|Eun-Ho Kim of Suwon (KR)]][[Category:Eun-Ho Kim of Suwon (KR)]]

[[:Category:Eun-Joo Jung of Icheon (KR)|Eun-Joo Jung of Icheon (KR)]][[Category:Eun-Joo Jung of Icheon (KR)]]

[[:Category:Jong-Hyun Yoo of Suwon (KR)|Jong-Hyun Yoo of Suwon (KR)]][[Category:Jong-Hyun Yoo of Suwon (KR)]]

[[:Category:Ki-Jun Yun of Yongin (KR)|Ki-Jun Yun of Yongin (KR)]][[Category:Ki-Jun Yun of Yongin (KR)]]

[[:Category:Sung-Hoon Lee of Icheon (KR)|Sung-Hoon Lee of Icheon (KR)]][[Category:Sung-Hoon Lee of Icheon (KR)]]

==VERTICAL SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240049464 titled 'VERTICAL SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

==Simplified Explanation==

The patent application describes a method for fabricating a semiconductor device. Here is a simplified explanation of the abstract:

* The method involves creating an alternating stack by stacking layers of dielectric material and sacrificial material on a substrate.
* A vertical trench is formed to divide the upper multi-layered stack into dummy stacks.
* An asymmetric stepped trench is then formed, extending downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack.
* The asymmetric stepped trench includes a first stepped sidewall at the edge of the pad stack and a second stepped sidewall at the edge of the dummy pad stack, occupying less area than the first stepped sidewall.

Potential applications of this technology:

* Fabrication of semiconductor devices such as integrated circuits and transistors.
* Manufacturing of electronic components for various industries including telecommunications, consumer electronics, and automotive.

Problems solved by this technology:

* Provides a method for creating an alternating stack in a semiconductor device, allowing for improved performance and functionality.
* Enables the formation of vertical and asymmetric stepped trenches, which can be used for various purposes such as isolation, interconnects, and device integration.

Benefits of this technology:

* Enhanced device performance and functionality due to the precise formation of alternating stacks and trenches.
* Improved manufacturing efficiency and cost-effectiveness by utilizing a simplified fabrication process.
* Enables the development of smaller and more compact semiconductor devices with higher integration density.


==Original Abstract Submitted==

a method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.



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