View source for 20240047223. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)

=SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Sho Kumakura of Kurokawa-gun (JP)|Sho Kumakura of Kurokawa-gun (JP)]][[Category:Sho Kumakura of Kurokawa-gun (JP)]]

[[:Category:Kenta Ono of Kurokawa-gun (JP)|Kenta Ono of Kurokawa-gun (JP)]][[Category:Kenta Ono of Kurokawa-gun (JP)]]

[[:Category:Shinya Ishikawa of Kurokawa-gun (JP)|Shinya Ishikawa of Kurokawa-gun (JP)]][[Category:Shinya Ishikawa of Kurokawa-gun (JP)]]

==SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240047223 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

==Simplified Explanation==

The present disclosure is about a substrate processing method that involves providing a substrate in a chamber. The substrate has an etching target film and a tin-containing film, where the tin-containing film defines at least one opening on the etching target film. The method further includes forming a modified film by supplying a processing gas to the chamber, which forms the modified film on the surface of the tin-containing film. The processing gas used can be a halogen-containing gas or an oxygen-containing gas.

* The method involves providing a substrate with an etching target film and a tin-containing film.
* The tin-containing film has at least one opening on the etching target film.
* A processing gas is supplied to the chamber to form a modified film on the surface of the tin-containing film.
* The processing gas can be a halogen-containing gas or an oxygen-containing gas.

Potential applications of this technology:
* Semiconductor manufacturing: This method can be used in the fabrication of semiconductor devices where precise etching and modification of films are required.
* Thin film deposition: The modified film formed using this method can serve as a protective layer or enhance the properties of the underlying films, making it useful in various thin film deposition processes.

Problems solved by this technology:
* Selective modification: The method allows for selective modification of the tin-containing film without affecting the etching target film, enabling precise control over the modification process.
* Enhanced film properties: The modified film can improve the properties of the underlying films, such as adhesion, conductivity, or optical properties, leading to improved device performance.

Benefits of this technology:
* Selective and controlled modification: The method provides a means to selectively modify specific areas of the substrate, allowing for precise control over the modification process.
* Improved film properties: The modified film can enhance the properties of the underlying films, leading to improved device performance and reliability.
* Compatibility with different gases: The method can utilize either halogen-containing gases or oxygen-containing gases, providing flexibility in the choice of processing gas based on specific requirements.


==Original Abstract Submitted==

a substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.



[[Category:H01L21/311]]
[[Category:H01J37/32]]
[[Category:H01L21/3213]]
[[Category:H01L21/308]]