View source for 20240038527. FORMING FILMS WITH IMPROVED FILM QUALITY simplified abstract (Applied Materials, Inc.)

=FORMING FILMS WITH IMPROVED FILM QUALITY=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Bhargav S. Citla of Fremont CA (US)|Bhargav S. Citla of Fremont CA (US)]][[Category:Bhargav S. Citla of Fremont CA (US)]]

[[:Category:Srinivas D. Nemani of Saratoga CA (US)|Srinivas D. Nemani of Saratoga CA (US)]][[Category:Srinivas D. Nemani of Saratoga CA (US)]]

[[:Category:Purvam Modi of Sunnyvale CA (US)|Purvam Modi of Sunnyvale CA (US)]][[Category:Purvam Modi of Sunnyvale CA (US)]]

[[:Category:Ellie Y. Yieh of San Jose CA (US)|Ellie Y. Yieh of San Jose CA (US)]][[Category:Ellie Y. Yieh of San Jose CA (US)]]

==FORMING FILMS WITH IMPROVED FILM QUALITY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240038527 titled 'FORMING FILMS WITH IMPROVED FILM QUALITY

==Simplified Explanation==

The method described in this patent application involves depositing a flowable film on a substrate using different precursor flows and plasma effluents. The film is then partially removed from the sidewall of a feature within the substrate, leaving a remaining portion. The hydrogen content of the remaining portion is reduced to obtain a densified film, which is then treated according to a film treatment process.

* The method involves depositing a flowable film on a substrate using precursor flows and plasma effluents.
* A portion of the flowable film is removed from the sidewall of a feature within the substrate.
* The remaining portion of the flowable film is densified by reducing its hydrogen content.
* The densified film is then treated according to a film treatment process.

Potential Applications:
* This method can be used in the manufacturing of microelectronics and semiconductor devices.
* It can be applied in the production of thin film coatings for various industries, such as optics, solar cells, and displays.
* The method may find applications in the fabrication of microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).

Problems Solved:
* The method allows for precise control over the deposition and removal of the flowable film, enabling the creation of complex structures with high accuracy.
* By reducing the hydrogen content and densifying the film, the method improves the film's mechanical and electrical properties.
* The film treatment process further enhances the performance and stability of the densified film.

Benefits:
* The method offers a more efficient and controlled approach to depositing and modifying flowable films on substrates.
* It enables the production of high-quality films with improved properties, leading to enhanced device performance.
* The method allows for the fabrication of intricate structures and patterns, expanding the possibilities for device design and functionality.


==Original Abstract Submitted==

a method includes depositing a flowable film on a substrate by providing a first input flow, the first input flow including plasma effluents of a first precursor, removing a portion of the flowable film from a sidewall of a feature defined within the substrate to obtain a remaining portion of the flowable film by providing a second input flow, the second input flow including plasma effluents of a second precursor, reducing hydrogen content of the remaining portion of the flowable film to obtain a densified film by providing a third input flow, the third input flow including plasma effluents of a third precursor, and treating the densified film in accordance with a film treatment process.



[[Category:H01L21/02]]
[[Category:H01L21/321]]
[[Category:H01L21/3065]]