View source for 20240030043. NEUTRAL BEAM ANNEALING APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME simplified abstract (SAMSUNG DISPLAY CO., LTD.)

=NEUTRAL BEAM ANNEALING APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME=


==Organization Name==

[[:Category:SAMSUNG DISPLAY CO., LTD.|SAMSUNG DISPLAY CO., LTD.]]


[[Category:SAMSUNG DISPLAY CO., LTD.]]

==Inventor(s)==

[[:Category:Takayuki Fukasawa of Yongin-si (KR)|Takayuki Fukasawa of Yongin-si (KR)]][[Category:Takayuki Fukasawa of Yongin-si (KR)]]

==NEUTRAL BEAM ANNEALING APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240030043 titled 'NEUTRAL BEAM ANNEALING APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME

==Simplified Explanation==

The abstract describes a neutral beam annealing apparatus that is used for annealing substrates. The apparatus includes a plasma chamber, a gas supplier, electrodes, an induction coil, a substrate support, an annealing chamber, and a pressure controller.

* The plasma chamber has a cylinder shape and is used to form plasma.
* The first gas supplier supplies a gas to form the plasma.
* The first electrode is coupled to the upper surface of the plasma chamber.
* The induction coil is wound around the outer circumference of the plasma chamber and receives a high-frequency voltage from a power supply.
* The second electrode is coupled to the lower surface of the plasma chamber and has through holes defined in it.
* The substrate support supports the substrate to be annealed and adjusts the vertical distance between the substrate and the second electrode.
* The annealing chamber accommodates the substrate support.
* The pressure controller supplies a second gas to the annealing chamber.

Potential applications of this technology:
* Semiconductor manufacturing: The apparatus can be used for annealing semiconductor substrates, improving their electrical properties and performance.
* Thin film deposition: The apparatus can be used for annealing thin films, enhancing their adhesion and stability.
* Solar cell production: The apparatus can be used for annealing solar cell substrates, optimizing their efficiency and output.

Problems solved by this technology:
* Uniform annealing: The apparatus ensures uniform heating and annealing of the substrate, preventing localized defects and inconsistencies.
* Contamination control: The plasma chamber and gas supply system minimize the introduction of impurities, ensuring a clean annealing process.
* Precise control: The substrate support allows for precise adjustment of the distance between the substrate and the second electrode, enabling control over the annealing conditions.

Benefits of this technology:
* Improved substrate quality: The apparatus enhances the quality and performance of substrates by providing controlled and uniform annealing.
* Increased productivity: The efficient and precise annealing process reduces production time and improves overall productivity.
* Cost savings: The apparatus minimizes material waste and reduces the need for rework, resulting in cost savings for manufacturers.


==Original Abstract Submitted==

a neutral beam annealing apparatus includes a plasma chamber having a cylinder shape, a first gas supplier to supply a first gas for forming plasma, a first electrode coupled to an upper surface of the plasma chamber, an induction coil wound around an outer circumference of the plasma chamber to receive a high-frequency voltage from a high-frequency power supply, a second electrode which is coupled to a lower surface of the plasma chamber, and in which through holes are defined, a substrate support supporting a substrate to be annealed and adjusting a vertical distance between the substrate and the second electrode, an annealing chamber accommodating the substrate support, and a pressure controller which supplies a second gas to the annealing chamber.



[[Category:H01L21/477]]
[[Category:H01J37/32]]