View source for 20240021674. TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES simplified abstract (SKYWORKS SOLUTIONS, INC.)

=TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES=


==Organization Name==

[[:Category:SKYWORKS SOLUTIONS, INC.|SKYWORKS SOLUTIONS, INC.]]


[[Category:SKYWORKS SOLUTIONS, INC.]]

==Inventor(s)==

[[:Category:Yun Shi of San Diego CA (US)|Yun Shi of San Diego CA (US)]][[Category:Yun Shi of San Diego CA (US)]]

[[:Category:Tzung-Yin Lee of Costa Mesa CA (US)|Tzung-Yin Lee of Costa Mesa CA (US)]][[Category:Tzung-Yin Lee of Costa Mesa CA (US)]]

==TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240021674 titled 'TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES

==Simplified Explanation==

The abstract describes a transistor design that includes multiple source regions and drain regions arranged in an alternating manner. These regions are implemented as a first type of active region. The transistor also includes multiple gate structures implemented relative to the source and drain regions. Applying a voltage to each gate structure creates a conductive channel between a corresponding pair of source and drain regions. Additionally, the transistor includes a body region, implemented as a second type of active region, which provides the conductive channel when the voltage is applied to the corresponding gate structure. A recessed region is defined by the end of each drain region and one or both of the adjacent gate structures.

* The patent describes a transistor design with alternating source and drain regions.
* The source and drain regions are implemented as a first type of active region.
* Gate structures are positioned relative to the source and drain regions.
* Applying a voltage to each gate structure creates a conductive channel between a pair of source and drain regions.
* A body region, implemented as a second type of active region, provides the conductive channel when the voltage is applied to the corresponding gate structure.
* A recessed region is formed by the end of each drain region and one or both of the adjacent gate structures.

Potential Applications:
* Integrated circuits
* Electronics manufacturing
* Semiconductor industry

Problems Solved:
* Improved transistor performance and efficiency
* Enhanced conductivity and channel formation
* Reduction of leakage current

Benefits:
* Higher transistor density
* Increased speed and performance of electronic devices
* Lower power consumption
* Improved reliability and stability


==Original Abstract Submitted==

a transistor can include a plurality of source regions and a plurality of drain regions arranged in an alternating manner, with each of the source regions and the drain regions being implemented as a first type active region, and a plurality of gate structures implemented relative to the source regions and the drain regions such that application of a voltage to each gate structure results in formation of a conductive channel between a respective pair of source and drain regions. the transistor can further include a body region configured to provide the respective conductive channel upon the application of the voltage to the corresponding gate structure, with the body region being implemented as a second type active region. the transistor can further include a recessed region defined by an end of each drain region and one or both of the gate structures adjacent to the drain region.



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