View source for 20240021644. TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Cheng Yu Huang of Hsinchu (TW)|Cheng Yu Huang of Hsinchu (TW)]][[Category:Cheng Yu Huang of Hsinchu (TW)]]

[[:Category:Chun-Hao Chuang of Hsinchu City (TW)|Chun-Hao Chuang of Hsinchu City (TW)]][[Category:Chun-Hao Chuang of Hsinchu City (TW)]]

[[:Category:Keng-Yu Chou of Kaohsiung City (TW)|Keng-Yu Chou of Kaohsiung City (TW)]][[Category:Keng-Yu Chou of Kaohsiung City (TW)]]

[[:Category:Wei-Chieh Chiang of Yuanlin Township (TW)|Wei-Chieh Chiang of Yuanlin Township (TW)]][[Category:Wei-Chieh Chiang of Yuanlin Township (TW)]]

[[:Category:Chin-Chia Kuo of Tainan City (TW)|Chin-Chia Kuo of Tainan City (TW)]][[Category:Chin-Chia Kuo of Tainan City (TW)]]

[[:Category:Wen-Hau Wu of New Taipei City (TW)|Wen-Hau Wu of New Taipei City (TW)]][[Category:Wen-Hau Wu of New Taipei City (TW)]]

[[:Category:Hua-Mao Chen of Tainan City (TW)|Hua-Mao Chen of Tainan City (TW)]][[Category:Hua-Mao Chen of Tainan City (TW)]]

[[:Category:Chih-Kung Chang of Zhudong Township (TW)|Chih-Kung Chang of Zhudong Township (TW)]][[Category:Chih-Kung Chang of Zhudong Township (TW)]]

==TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240021644 titled 'TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS

==Simplified Explanation==

The present disclosure relates to an image sensor and a method for forming the image sensor. In some embodiments, the image sensor includes an array of pixels and an inter-pixel trench isolation structure. The inter-pixel trench isolation structure is defined by a low-transmission layer and extends along the boundaries of the pixels, individually surrounding the photodetectors to separate them from each other.

* The image sensor comprises an array of pixels with individual photodetectors on a substrate.
* The inter-pixel trench isolation structure is defined by a low-transmission layer.
* The low-transmission layer, which may be made of metal or other suitable materials, surrounds the photodetectors and separates them from each other.
* The inter-pixel trench isolation structure has low transmission for incident radiation.

Potential applications of this technology:

* Image sensors in digital cameras, smartphones, and other electronic devices.
* Medical imaging devices.
* Surveillance cameras and security systems.
* Automotive cameras for advanced driver assistance systems (ADAS) and autonomous vehicles.

Problems solved by this technology:

* Reduces crosstalk between adjacent pixels in an image sensor, improving image quality.
* Enhances the sensitivity and accuracy of photodetectors by isolating them from each other.
* Minimizes interference from external light sources, resulting in better signal-to-noise ratio.

Benefits of this technology:

* Improved image quality and resolution.
* Higher sensitivity and accuracy in capturing light.
* Enhanced performance in low-light conditions.
* Reduction in image artifacts and noise.
* Increased reliability and durability of image sensors.


==Original Abstract Submitted==

various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. in some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. the array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. the inter-pixel trench isolation structure is in the substrate. further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. the inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. the low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).



[[Category:H01L27/146]]