View source for 20240021411. VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA simplified abstract (Ascentool, Inc.)

=VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA=


==Organization Name==

[[:Category:Ascentool, Inc.|Ascentool, Inc.]]


[[Category:Ascentool, Inc.]]

==Inventor(s)==

[[:Category:George Xinsheng Guo of Palo Alto CA (US)|George Xinsheng Guo of Palo Alto CA (US)]][[Category:George Xinsheng Guo of Palo Alto CA (US)]]

==VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240021411 titled 'VACUUM DEPOSITION INTO TRENCHES AND VIAS AND ETCH OF TRENCHES AND VIA

==Simplified Explanation==

The abstract describes a plasma deposition apparatus that utilizes a first plasma source to produce a plasma confined in a magnetic field. The apparatus includes a gas distribution device, a closed-loop electrode, and one or more magnets. The gas distribution device supplies gas, while the closed-loop electrode defines a central region and has one or more magnets outside its inner surface. The magnets generate the magnetic field in the central region, and together with the closed-loop electrode, produce a first plasma consisting of activated atoms, molecules, electrons, and ions from the gas. The apparatus also includes a collimator that collimates the activated particles and directs the ions towards a substrate.

* The apparatus includes a first plasma source that produces a plasma confined in a magnetic field.
* A gas distribution device supplies gas to the apparatus.
* A closed-loop electrode with one or more magnets outside its inner surface defines a central region.
* The magnets generate a magnetic field in the central region.
* The closed-loop electrode and magnets produce a first plasma consisting of activated atoms, molecules, electrons, and ions from the gas.
* A collimator is used to collimate and direct the ions towards a substrate.

Potential Applications:
* Thin film deposition: The plasma deposition apparatus can be used for depositing thin films on substrates, allowing for the creation of various functional coatings.
* Semiconductor manufacturing: The technology can be applied in the fabrication of semiconductor devices, such as integrated circuits and transistors.
* Surface modification: The apparatus can be utilized for modifying the surface properties of materials, enhancing their performance or introducing specific functionalities.

Problems Solved:
* Controlled plasma confinement: The use of a magnetic field and closed-loop electrode allows for the confinement of the plasma, ensuring a more controlled and stable plasma environment.
* Efficient ion deposition: The collimator enables the directed deposition of ions onto a substrate, improving the efficiency and accuracy of the deposition process.
* Enhanced plasma activation: The combination of the closed-loop electrode and magnets enhances the activation of atoms, molecules, electrons, and ions in the plasma, leading to improved deposition quality.

Benefits:
* Improved deposition control: The apparatus provides better control over the deposition process, resulting in more precise and uniform thin film coatings.
* Higher deposition efficiency: The collimator ensures a higher percentage of ions reach the substrate, increasing the deposition efficiency and reducing material waste.
* Enhanced plasma activation: The technology enhances the activation of particles in the plasma, leading to improved film properties and performance.


==Original Abstract Submitted==

a plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. the one or more magnets can produce the magnetic field in the center region. the closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. a collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.



[[Category:H01J37/32]]
[[Category:C23C14/35]]
[[Category:C23C16/50]]