View source for 20240021408. METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM simplified abstract (Lam Research Corporation)

=METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM=


==Organization Name==

[[:Category:Lam Research Corporation|Lam Research Corporation]]


[[Category:Lam Research Corporation]]

==Inventor(s)==

[[:Category:John C. Valcore, Jr. of Worthington OH (US)|John C. Valcore, Jr. of Worthington OH (US)]][[Category:John C. Valcore, Jr. of Worthington OH (US)]]

[[:Category:Bradford J. Lyndaker of Lowville NY (US)|Bradford J. Lyndaker of Lowville NY (US)]][[Category:Bradford J. Lyndaker of Lowville NY (US)]]

==METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240021408 titled 'METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PLASMA PROCESSING SYSTEM

==Simplified Explanation==

Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The patent describes a system where a base radio frequency (RF) signal pulses between a high power level and a low power level. Additionally, non-base RF generators, responsive to a control signal, proactively switch between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, the non-base RF generators can also switch between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. The patent also discloses techniques for determining the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals in advance of production time.

* The patent describes a method for processing a substrate in a multi-frequency plasma processing chamber.
* The base RF signal pulses between high and low power levels.
* Non-base RF generators switch between predefined power levels or RF frequencies in response to a control signal.
* Techniques are disclosed for determining the predefined power levels and RF frequencies in advance.

Potential applications of this technology:
* Semiconductor manufacturing: The disclosed methods and apparatus can be used in the fabrication of semiconductor devices, where precise control of plasma processing parameters is crucial.
* Thin film deposition: The ability to switch between different power levels and RF frequencies can enhance the deposition process for thin films, allowing for improved film quality and uniformity.
* Surface modification: The multi-frequency plasma processing chamber can be utilized for surface modification of various materials, such as improving adhesion properties or introducing specific functional groups.

Problems solved by this technology:
* Enhanced process control: The ability to switch between different power levels and RF frequencies allows for more precise control over the plasma processing parameters, leading to improved process repeatability and yield.
* Improved uniformity: By proactively switching between power levels or RF frequencies, the patent addresses issues related to non-uniform plasma distribution, resulting in improved substrate uniformity during processing.

Benefits of this technology:
* Increased process flexibility: The ability to switch between different power levels and RF frequencies provides flexibility in tailoring the plasma processing conditions to specific requirements, enabling a wider range of applications.
* Enhanced process efficiency: The disclosed methods and apparatus optimize the use of power and RF frequencies, resulting in improved process efficiency and reduced energy consumption.
* Improved product quality: The precise control over plasma processing parameters leads to improved product quality, with reduced defects and enhanced performance characteristics.


==Original Abstract Submitted==

methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. the base rf signal pulses between a high power level and a low power level. each of the non-base rf generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base rf signal pulses. alternatively or additionally, each of the non-base rf generators, responsive to a control signal, proactively switches between a first predefined rf frequency and a second predefined rf frequency as the base rf signal pulses. techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined rf frequencies for the non-base rf signals.



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