View source for 20240014270. INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)

=INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME=


==Organization Name==

[[:Category:FUJI ELECTRIC CO., LTD.|FUJI ELECTRIC CO., LTD.]]


[[Category:FUJI ELECTRIC CO., LTD.]]

==Inventor(s)==

[[:Category:Keiji Okumura of Matsumoto (JP)|Keiji Okumura of Matsumoto (JP)]][[Category:Keiji Okumura of Matsumoto (JP)]]

==INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240014270 titled 'INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

==Simplified Explanation==

The abstract describes an insulated-gate semiconductor device with trenches arranged in a chip structure. The trenches define sidewalls in a first and second sidewall surface facing each other. The device includes a first unit cell with a main-electrode region in contact with the first sidewall surface of a first trench, a base region in contact with the bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with the bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and the bottom surface of the first trench. It also includes a second unit cell with an operation suppression region in contact with the first and second sidewall surfaces of a second trench, located at one end of an array of the trenches.

* The device is an insulated-gate semiconductor device with trenches arranged in a chip structure.
* The trenches define sidewalls in a first and second sidewall surface facing each other.
* The first unit cell includes a main-electrode region, a base region, a drift layer, and a gate protection-region.
* The second unit cell includes an operation suppression region.
* The second unit cell is located at one end of an array of the trenches.

Potential applications of this technology:
* Power electronics
* Integrated circuits
* Switching devices

Problems solved by this technology:
* Improved power efficiency
* Enhanced performance of semiconductor devices
* Reduction in size and cost of devices

Benefits of this technology:
* Higher power density
* Improved thermal management
* Increased reliability and durability


==Original Abstract Submitted==

an insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.



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