View source for 20240014254. TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Ting-Chen Hsu of Taichung City (TW)|Ting-Chen Hsu of Taichung City (TW)]][[Category:Ting-Chen Hsu of Taichung City (TW)]]

[[:Category:Hsin-Li Cheng of Hsin Chu (TW)|Hsin-Li Cheng of Hsin Chu (TW)]][[Category:Hsin-Li Cheng of Hsin Chu (TW)]]

[[:Category:Jyun-Ying Lin of Wujie Township (TW)|Jyun-Ying Lin of Wujie Township (TW)]][[Category:Jyun-Ying Lin of Wujie Township (TW)]]

[[:Category:Yingkit Felix Tsui of Cupertino CA (US)|Yingkit Felix Tsui of Cupertino CA (US)]][[Category:Yingkit Felix Tsui of Cupertino CA (US)]]

[[:Category:Shu-Hui Su of Tucheng City (TW)|Shu-Hui Su of Tucheng City (TW)]][[Category:Shu-Hui Su of Tucheng City (TW)]]

[[:Category:Shi-Min Wu of Changhua County (TW)|Shi-Min Wu of Changhua County (TW)]][[Category:Shi-Min Wu of Changhua County (TW)]]

==TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240014254 titled 'TRENCH CAPACITOR FILM SCHEME TO REDUCE SUBSTRATE WARPAGE

==Simplified Explanation==

The present application is directed towards an integrated chip (IC) that includes a trench capacitor overlying a substrate. The trench capacitor consists of multiple capacitor electrode structures, warping reduction structures, and capacitor dielectric structures. These structures are stacked alternately and define a vertical trench segment in the substrate. The capacitor electrode structures are composed of a metal component and a nitrogen component, while the warping reduction structures include the metal component, the nitrogen component, and an oxygen component.

* The patent application describes an integrated chip (IC) with a trench capacitor that is built on top of a substrate.
* The trench capacitor is made up of multiple capacitor electrode structures, warping reduction structures, and capacitor dielectric structures.
* These structures are stacked in an alternating pattern and form a vertical trench segment within the substrate.
* The capacitor electrode structures consist of a combination of metal and nitrogen components.
* The warping reduction structures include metal, nitrogen, and oxygen components.

Potential Applications:

* This technology can be applied in the field of semiconductor manufacturing for the production of integrated chips.
* It can be used in various electronic devices that require high-capacity capacitors, such as smartphones, tablets, and computers.
* The trench capacitor design can improve the performance and efficiency of these electronic devices.

Problems Solved:

* The integration of capacitor electrode structures, warping reduction structures, and capacitor dielectric structures in a trench capacitor design addresses the need for compact and efficient capacitors in integrated chips.
* The alternating stacking of these structures helps reduce warping and distortion, which can affect the performance and reliability of the IC.

Benefits:

* The trench capacitor design allows for higher capacitance in a smaller footprint, enabling more efficient use of space in integrated chips.
* The combination of metal, nitrogen, and oxygen components in the capacitor electrode and warping reduction structures enhances the performance and stability of the IC.
* The improved design and construction of the trench capacitor can lead to enhanced functionality and reliability of electronic devices.


==Original Abstract Submitted==

various embodiments of the present application are directed towards an integrated chip (ic). the ic comprises a trench capacitor overlying a substrate. the trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. the plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. the plurality of capacitor electrode structures comprise a metal component and a nitrogen component. the plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.



[[Category:H01L49/02]]