View source for 20240011150. METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL simplified abstract (ASML Netherlands B.V.)

=METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL=


==Organization Name==

[[:Category:ASML Netherlands B.V.|ASML Netherlands B.V.]]


[[Category:ASML Netherlands B.V.]]

==Inventor(s)==

[[:Category:Sonia Castellanos Ortega of Leiden (NL)|Sonia Castellanos Ortega of Leiden (NL)]][[Category:Sonia Castellanos Ortega of Leiden (NL)]]

[[:Category:Jan Verhoeven of Kockengen (NL)|Jan Verhoeven of Kockengen (NL)]][[Category:Jan Verhoeven of Kockengen (NL)]]

[[:Category:Joost Wilhelmus Maria Frenken of Leiden (NL)|Joost Wilhelmus Maria Frenken of Leiden (NL)]][[Category:Joost Wilhelmus Maria Frenken of Leiden (NL)]]

[[:Category:Pavlo Antonov of Valkenburg (NL)|Pavlo Antonov of Valkenburg (NL)]][[Category:Pavlo Antonov of Valkenburg (NL)]]

[[:Category:Nicolaas Ten Kate of Almkerk (NL)|Nicolaas Ten Kate of Almkerk (NL)]][[Category:Nicolaas Ten Kate of Almkerk (NL)]]

[[:Category:Olivier Christian Maurice Lugier of Amsterdam (NL)|Olivier Christian Maurice Lugier of Amsterdam (NL)]][[Category:Olivier Christian Maurice Lugier of Amsterdam (NL)]]

==METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240011150 titled 'METHOD AND APPARATUS FOR FORMING A PATTERNED LAYER OF CARBON, METHOD OF FORMING A PATTERNED LAYER OF MATERIAL

==Simplified Explanation==

The patent application describes methods and apparatus for forming a patterned layer of carbon on a solid structure using extreme ultraviolet radiation and a carbon-containing precursor. The radiation interacts with the solid structure to cause the formation of a carbon layer in a selected portion, following the pattern defined by that portion.

* The patent application describes a method for forming a patterned layer of carbon on a solid structure.
* The method involves irradiating a selected portion of the solid structure's surface with extreme ultraviolet radiation.
* A carbon-containing precursor is present during the irradiation process.
* The interaction between the radiation and the solid structure in the selected portion leads to the formation of a carbon layer.
* The carbon layer is formed in a pattern that corresponds to the selected portion of the solid structure.

Potential Applications:

* Microelectronics: The patterned layer of carbon can be used in the fabrication of microelectronic devices, such as transistors and integrated circuits.
* Nanotechnology: The carbon layer can be utilized in the development of nanoscale devices and structures.
* Optics: The patterned carbon layer can be employed in optical devices, such as lenses and mirrors.

Problems Solved:

* Precise patterning: The method allows for the formation of a carbon layer in a specific pattern, enabling precise control over the placement of carbon on the solid structure.
* Carbon deposition: The use of extreme ultraviolet radiation and a carbon-containing precursor facilitates the deposition of carbon in a controlled manner, overcoming challenges associated with conventional carbon deposition techniques.

Benefits:

* Enhanced device performance: The precise patterning of the carbon layer can improve the performance of microelectronic and nanoscale devices.
* Simplified fabrication process: The method simplifies the process of forming patterned carbon layers, potentially reducing manufacturing costs and time.
* Versatile applications: The patterned carbon layer can be utilized in various fields, including microelectronics, nanotechnology, and optics.


==Original Abstract Submitted==

methods and apparatus for forming a patterned layer of carbon are disclosed. in one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. the radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. the layer of carbon is formed in a pattern defined by the selected portion.



[[Category:C23C16/04]]
[[Category:C23C16/26]]
[[Category:C23C16/48]]