View source for 18539700. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

=SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Semiconductor Energy Laboratory Co., Ltd.|Semiconductor Energy Laboratory Co., Ltd.]]


[[Category:Semiconductor Energy Laboratory Co., Ltd.]]

==Inventor(s)==

[[:Category:Shunpei Yamazaki of Setagaya (JP)|Shunpei Yamazaki of Setagaya (JP)]][[Category:Shunpei Yamazaki of Setagaya (JP)]]

[[:Category:Naoki Okuno of Yamato (JP)|Naoki Okuno of Yamato (JP)]][[Category:Naoki Okuno of Yamato (JP)]]

[[:Category:Yasuhiro Jinbo of Isehara (JP)|Yasuhiro Jinbo of Isehara (JP)]][[Category:Yasuhiro Jinbo of Isehara (JP)]]

==SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18539700 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the patent application involves a process of forming multiple layers over a substrate to create a structure with favorable electrical characteristics. The key steps include depositing oxide and insulating films, performing microwave and heat treatments, depositing a conductive film, and removing parts of the layers to expose the top surface of the insulator.

* Formation of multiple layers over a substrate to create a semiconductor device with favorable electrical characteristics
* Deposition of oxide and insulating films, followed by microwave and heat treatments
* Deposition of a conductive film and removal of parts of the layers to expose the top surface of the insulator

== Potential Applications ==
The technology described in the patent application could be applied in the manufacturing of various semiconductor devices, such as transistors, diodes, and integrated circuits.

== Problems Solved ==
This technology addresses the need for semiconductor devices with improved electrical characteristics, such as enhanced conductivity and insulation properties.

== Benefits ==
The benefits of this technology include improved performance and reliability of semiconductor devices, potentially leading to advancements in electronics and technology.

== Potential Commercial Applications ==
The technology could find commercial applications in the semiconductor industry for the production of high-performance electronic components.

== Possible Prior Art ==
One possible prior art for this technology could be similar methods used in the semiconductor industry for the fabrication of devices with specific electrical properties.

=== Unanswered Questions ===

=== How does the microwave treatment affect the properties of the semiconductor device? ===
The article does not provide detailed information on how the microwave treatment influences the characteristics of the semiconductor device.

=== What specific materials are used in the deposition of the oxide and insulating films? ===
The article does not specify the exact materials utilized in the deposition process of the oxide and insulating films.


==Original Abstract Submitted==

A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.



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