View source for 18530113. SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS simplified abstract (Micron Technology, Inc.)

=SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Kamal M. Karda of Boise ID (US)|Kamal M. Karda of Boise ID (US)]][[Category:Kamal M. Karda of Boise ID (US)]]

[[:Category:Kirk D. Prall of Boise ID (US)|Kirk D. Prall of Boise ID (US)]][[Category:Kirk D. Prall of Boise ID (US)]]

[[:Category:Haitao Liu of Boise ID (US)|Haitao Liu of Boise ID (US)]][[Category:Haitao Liu of Boise ID (US)]]

[[:Category:Durai Vishak Nirmal Ramaswamy of Boise ID (US)|Durai Vishak Nirmal Ramaswamy of Boise ID (US)]][[Category:Durai Vishak Nirmal Ramaswamy of Boise ID (US)]]

==SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18530113 titled 'SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS

==Simplified Explanation==

The patent application describes a transistor with threshold voltage control gates and active control gates on opposing sides of a channel region, separated by a dielectric region. This transistor is used in a semiconductor device comprising memory cells.

* The transistor includes threshold voltage control gates and active control gates.
* The gates are positioned on opposing sides of a channel region.
* A dielectric region separates the gates from the channel region.
* The semiconductor device contains memory cells with these transistors.

== Potential Applications ==
This technology can be applied in:
* Memory devices
* Integrated circuits
* Microprocessors

== Problems Solved ==
This technology helps in:
* Improving memory cell performance
* Enhancing semiconductor device efficiency

== Benefits ==
The benefits of this technology include:
* Increased memory cell reliability
* Enhanced device speed and performance

== Potential Commercial Applications ==
This technology can be used in:
* Consumer electronics
* Automotive electronics
* Telecommunications industry

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar transistor structures in memory devices and integrated circuits.

== Unanswered Questions ==
=== How does this technology compare to existing transistor designs in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing transistor designs to evaluate performance and efficiency.

=== What are the specific manufacturing processes involved in creating these transistors and memory cells? ===
The article does not detail the specific manufacturing processes used to create the transistors and memory cells.


==Original Abstract Submitted==

A transistor comprising threshold voltage control gates. The transistor also comprises active control gates adjacent opposing first sides of a channel region, the threshold voltage control gates adjacent opposing second sides of the channel region, and a dielectric region between the threshold voltage control gates and the channel region and between the active control gates and the channel region. A semiconductor device comprising memory cells comprising the transistor is also disclosed, as are systems comprising the memory cells, methods of forming the semiconductor device, and methods of operating a semiconductor device.



[[Category:H01L29/786]]
[[Category:G11C11/409]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]
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