View source for 18519263. INTEGRATED CIRCUITS WITH GATE CUT FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=INTEGRATED CIRCUITS WITH GATE CUT FEATURES=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Zhi-Chang Lin of Hsinchu County (TW)|Zhi-Chang Lin of Hsinchu County (TW)]][[Category:Zhi-Chang Lin of Hsinchu County (TW)]]

[[:Category:Wei-Hao Wu of Hsinchu City (TW)|Wei-Hao Wu of Hsinchu City (TW)]][[Category:Wei-Hao Wu of Hsinchu City (TW)]]

[[:Category:Jia-Ni Yu of Hsinchu (TW)|Jia-Ni Yu of Hsinchu (TW)]][[Category:Jia-Ni Yu of Hsinchu (TW)]]

[[:Category:Chih-Hao Wang of Hsinchu County (TW)|Chih-Hao Wang of Hsinchu County (TW)]][[Category:Chih-Hao Wang of Hsinchu County (TW)]]

[[:Category:Kuo-Cheng Ching of Zhubei City (TW)|Kuo-Cheng Ching of Zhubei City (TW)]][[Category:Kuo-Cheng Ching of Zhubei City (TW)]]

==INTEGRATED CIRCUITS WITH GATE CUT FEATURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18519263 titled 'INTEGRATED CIRCUITS WITH GATE CUT FEATURES

==Simplified Explanation==

The abstract describes an integrated circuit with gate cut features and a method for forming the integrated circuit. Here are the key points:

* Workpiece received with substrate and fins extending from it.
* First layer formed on side surface of each fin, creating a trench between fins.
* Cut feature formed in the trench.
* First gate structure formed on first fin, second gate structure on second fin with cut feature between them.

== Potential Applications ==
* Advanced semiconductor technology
* High-performance computing
* Mobile devices
* Internet of Things (IoT) devices

== Problems Solved ==
* Improved integration of gate cut features in integrated circuits
* Enhanced performance and efficiency of electronic devices
* Miniaturization of electronic components

== Benefits ==
* Increased processing speed and performance
* Reduction in power consumption
* Smaller and more efficient electronic devices
* Enhanced functionality and capabilities


==Original Abstract Submitted==

Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.



[[Category:H01L27/088]]
[[Category:H01L21/033]]
[[Category:H01L21/8234]]
[[Category:H01L29/66]]
[[Category:H01L29/78]]