View source for 18515226. MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Yu-Chao Lin of Hsinchu City (TW)|Yu-Chao Lin of Hsinchu City (TW)]][[Category:Yu-Chao Lin of Hsinchu City (TW)]]

[[:Category:Tung-Ying Lee of Hsinchu City (TW)|Tung-Ying Lee of Hsinchu City (TW)]][[Category:Tung-Ying Lee of Hsinchu City (TW)]]

==MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18515226 titled 'MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME

==Simplified Explanation==

The memory cell described in the patent application includes a bottom electrode, a top electrode, and a storage element layer situated between the two electrodes. The sidewall of the storage element layer extends in a different direction from the sidewall of the top electrode.

* Memory cell with bottom electrode, top electrode, and storage element layer
* Sidewall of storage element layer extends differently from top electrode sidewall
* Semiconductor device incorporating the memory cell

== Potential Applications ==
* Memory storage devices
* Semiconductor manufacturing

== Problems Solved ==
* Efficient memory cell design
* Improved semiconductor device performance

== Benefits ==
* Enhanced data storage capabilities
* Increased device reliability
* Potential for smaller and more efficient devices


==Original Abstract Submitted==

Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, and a storage element layer. The storage element layer is disposed between the bottom and top electrodes. An extending direction of a sidewall of the storage element layer is different from an extending direction of a sidewall of the top electrode. A semiconductor device having the memory cell is also provided.



[[Category:H10N70/00]]
[[Category:H10N70/20]]