View source for 18499449. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=MEMORY DEVICE AND OPERATING METHOD THEREOF=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:He-Zhou Wan of Shanghai City (CN)|He-Zhou Wan of Shanghai City (CN)]][[Category:He-Zhou Wan of Shanghai City (CN)]]

[[:Category:Xiu-Li Yang of Shanghai City (CN)|Xiu-Li Yang of Shanghai City (CN)]][[Category:Xiu-Li Yang of Shanghai City (CN)]]

[[:Category:Mu-Yang Ye of Nanjing City (CN)|Mu-Yang Ye of Nanjing City (CN)]][[Category:Mu-Yang Ye of Nanjing City (CN)]]

[[:Category:Yan-Bo Song of Shanghai City (CN)|Yan-Bo Song of Shanghai City (CN)]][[Category:Yan-Bo Song of Shanghai City (CN)]]

==MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18499449 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF

==Simplified Explanation==

The memory device described in the abstract includes three transistors arranged in a specific order along a direction, with each transistor having a specific length along that direction. The first transistor is connected to a first word line, the second transistor is connected to a second word line, and the third transistor is connected between ground and a node that is connected to both the first and second nodes.

* The memory device includes a first transistor, a second transistor, and a third transistor.
* The first transistor is connected to a first word line at a first node.
* The second transistor is connected to a second word line at a second node.
* The control terminal of the first transistor is connected to the control terminal of the second transistor.
* The third transistor is connected between ground and a node that is connected to both the first and second nodes.
* In a layout view, each transistor has a specific length along a direction, and they are arranged in a specific order along that direction.

Potential Applications:
* Memory devices in electronic devices
* Computer systems
* Data storage systems

Problems Solved:
* Efficient memory storage
* Improved data retrieval
* Enhanced memory device layout

Benefits:
* Increased memory device performance
* Enhanced data processing speed
* Improved overall efficiency in electronic devices


==Original Abstract Submitted==

A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.



[[Category:G11C11/408]]
[[Category:G11C5/06]]
[[Category:G11C11/4074]]
[[Category:G11C11/4094]]