View source for 18471002. SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)

=SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM=


==Organization Name==

[[:Category:Kokusai Electric Corporation|Kokusai Electric Corporation]]


[[Category:Kokusai Electric Corporation]]

==Inventor(s)==

[[:Category:Yukinori Aburatani of Toyama-shi (JP)|Yukinori Aburatani of Toyama-shi (JP)]][[Category:Yukinori Aburatani of Toyama-shi (JP)]]

[[:Category:Kaoru Yamamoto of Toyama-shi (JP)|Kaoru Yamamoto of Toyama-shi (JP)]][[Category:Kaoru Yamamoto of Toyama-shi (JP)]]

==SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18471002 titled 'SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

==Simplified Explanation==

The abstract describes a patent application for a technique involving a process chamber and a plasma generator to process substrates using generated plasma.

* The technique involves a process chamber designed to process multiple substrates.
* A plasma generator is used to create plasma within the process chamber.
* The plasma generator includes a first electrode extending from the lower side to the intermediate side of the chamber, and a second electrode extending from the upper side to the intermediate side.

== Potential Applications ==
This technology could be applied in semiconductor manufacturing, surface treatment processes, and thin film deposition.

== Problems Solved ==
This innovation helps in improving the efficiency and uniformity of plasma processing on multiple substrates simultaneously.

== Benefits ==
The technique allows for more consistent and controlled plasma processing, leading to higher quality and more reliable end products.

== Potential Commercial Applications ==
"Plasma Processing System for Substrate Treatment" - Optimizing plasma processing for various industries.

== Possible Prior Art ==
There may be prior art related to plasma generators and process chambers in the field of semiconductor manufacturing and materials processing.

== Unanswered Questions ==

=== How does this technique compare to existing plasma processing systems in terms of throughput and quality control? ===
This article does not provide a direct comparison with existing systems in terms of throughput and quality control.

=== What are the specific industries or applications where this technology is expected to have the most impact? ===
The article does not specify the specific industries or applications where this technology is expected to have the most impact.


==Original Abstract Submitted==

There is provided a technique that includes: a process chamber configured to process a plurality of substrates; and a plasma generator configured to generate plasma in the process chamber, the plasma generator including a first electrode part configured to extend from a lower side to an intermediate side of the process chamber, and a second electrode part configured to extend from an upper side to the intermediate side of the process chamber.



[[Category:H01J37/32]]