View source for 18463754. COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED simplified abstract (FUJIFILM Corporation)

=COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED=


==Organization Name==

[[:Category:FUJIFILM Corporation|FUJIFILM Corporation]]


[[Category:FUJIFILM Corporation]]

==Inventor(s)==

[[:Category:Yuta Shigenoi of Haibara-gun (JP)|Yuta Shigenoi of Haibara-gun (JP)]][[Category:Yuta Shigenoi of Haibara-gun (JP)]]

[[:Category:Atsushi Mizutani of Haibara-gun (JP)|Atsushi Mizutani of Haibara-gun (JP)]][[Category:Atsushi Mizutani of Haibara-gun (JP)]]

[[:Category:Tomonori Takahashi of Haibara-gun (JP)|Tomonori Takahashi of Haibara-gun (JP)]][[Category:Tomonori Takahashi of Haibara-gun (JP)]]

==COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18463754 titled 'COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED

==Simplified Explanation==

The present invention is a composition for treating a semiconductor that suppresses the etching of silicon germanium and increases the etching rate of silicon compared to silicon germanium. It also provides a method for treating a semiconductor using this composition.

* The composition includes a quaternary ammonium salt with a hydroxyl group, a polar organic solvent, a nitrogen-containing compound selected from a specific group, and water.
* The mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is between 0.00001 and 0.1.

Potential applications of this technology:

* Semiconductor manufacturing: This composition can be used in the fabrication of semiconductor devices, where selective etching of silicon over silicon germanium is required.
* Integrated circuits: The composition can be used to etch silicon in the production of integrated circuits, enabling precise and controlled etching processes.
* Nanotechnology: The technology can be applied in the development of nanoscale devices and structures, where selective etching of silicon is necessary.

Problems solved by this technology:

* Selective etching: The composition addresses the challenge of selectively etching silicon without affecting silicon germanium, allowing for precise etching processes in semiconductor manufacturing.
* Etching rate control: The technology provides a means to control the etching rate of silicon, enabling more accurate and efficient fabrication processes.

Benefits of this technology:

* Enhanced etching selectivity: The composition allows for a large ratio of etching rate between silicon and silicon germanium, ensuring selective etching and avoiding damage to the desired material.
* Improved process control: The technology provides a method for controlling the etching rate of silicon, leading to more precise and controlled fabrication processes.
* Increased efficiency: By optimizing the etching process, the composition improves the efficiency of semiconductor manufacturing and reduces material waste.


==Original Abstract Submitted==

The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for treating a semiconductor. The composition for treating a semiconductor according to the present invention is a composition for treating a semiconductor including a quaternary ammonium salt having a hydroxyl group, a polar organic solvent, at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof, and water, in which the mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.1.



[[Category:H01L21/3213]]