View source for 18460203. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

=SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE=


==Organization Name==

[[:Category:Kioxia Corporation|Kioxia Corporation]]


[[Category:Kioxia Corporation]]

==Inventor(s)==

[[:Category:Satoshi Nagashima of Yokkaichi Mie (JP)|Satoshi Nagashima of Yokkaichi Mie (JP)]][[Category:Satoshi Nagashima of Yokkaichi Mie (JP)]]

==SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18460203 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

==Simplified Explanation==

The semiconductor memory device described in the abstract includes a unique structure with a first stacked body, a second stacked body, an interposed portion, and a columnar body. The interposed portion is located between the first and second stacked bodies, while the columnar body consists of different portions connecting the stacked bodies.

* The semiconductor memory device has a first columnar portion extending inside the first stacked body, a second columnar portion extending inside the second stacked body, and a connection portion in the interposed portion linking the two columnar portions.
* The interposed portion contains multiple layers, including a first insulating material layer, a second layer with the same insulating material, and a third layer with a different material.

== Potential Applications ==
The technology described in this patent application could be applied in:
* Advanced semiconductor memory devices
* High-performance computing systems

== Problems Solved ==
This innovation addresses issues related to:
* Improving data storage and retrieval efficiency
* Enhancing the reliability and durability of semiconductor memory devices

== Benefits ==
The benefits of this technology include:
* Increased data processing speed
* Enhanced memory capacity
* Improved overall performance of electronic devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could be seen in:
* Consumer electronics
* Data centers

== Possible Prior Art ==
One possible prior art for this technology could be the development of stacked memory structures in semiconductor devices.

=== Unanswered Questions ===

=== How does this technology impact energy consumption in electronic devices? ===
This article does not provide information on the energy efficiency of the semiconductor memory device described. Further research is needed to determine the impact on energy consumption.

=== What are the potential cost implications of implementing this technology in mass production? ===
The article does not discuss the cost implications of mass-producing semiconductor memory devices with this structure. Additional studies are required to evaluate the economic feasibility of widespread adoption.


==Original Abstract Submitted==

A semiconductor memory device includes a first stacked body, a second stacked body, an interposed portion, and a columnar body. The interposed portion is disposed between the first stacked body and the second stacked body. The columnar body includes a first columnar portion extending in a first direction inside the first stacked body, a second columnar portion extending in the first direction inside the second stacked body, and a connection portion disposed in the interposed portion and connecting the first columnar portion to the second columnar portion. At least part of the interposed portion has a first layer containing a first insulating material, a second layer disposed between the first layer and the second stacked body in the first direction and containing the first insulating material, and a third layer disposed between the first layer and the second layer in the first direction and containing a first material different from the first insulating material.



[[Category:G11C16/04]]
[[Category:H10B41/10]]
[[Category:H10B41/27]]
[[Category:H10B41/35]]
[[Category:H10B43/10]]
[[Category:H10B43/27]]
[[Category:H10B43/35]]