View source for 18455941. THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Bo-Eun Park of Hwaseong-si (KR)|Bo-Eun Park of Hwaseong-si (KR)]][[Category:Bo-Eun Park of Hwaseong-si (KR)]]

[[:Category:Jooho Lee of Hwaseong-si (KR)|Jooho Lee of Hwaseong-si (KR)]][[Category:Jooho Lee of Hwaseong-si (KR)]]

[[:Category:Yongsung Kim of Suwon-si (KR)|Yongsung Kim of Suwon-si (KR)]][[Category:Yongsung Kim of Suwon-si (KR)]]

[[:Category:Jeonggyu Song of Seongnam-si (KR)|Jeonggyu Song of Seongnam-si (KR)]][[Category:Jeonggyu Song of Seongnam-si (KR)]]

==THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18455941 titled 'THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME

==Simplified Explanation==

The patent application describes a thin film structure consisting of three layers: a first conductive layer, a dielectric material layer, and an upper layer. The dielectric material layer is made of HfAO and meets either of two conditions: it is either formed to a thickness of 5 nm or less, or it has a specific range of composition (x) within HfAO (0.3 to 0.5).

* The thin film structure consists of a first conductive layer, a dielectric material layer, and an upper layer.
* The dielectric material layer is made of HfAO.
* The dielectric material layer satisfies either of two conditions: it is formed to a thickness of 5 nm or less, or it has a composition range of x within HfAO (0.3 to 0.5).

Potential applications of this technology:

* Thin film transistors
* Memory devices
* Solar cells
* Display panels

Problems solved by this technology:

* Improved performance and efficiency of thin film devices
* Enhanced stability and reliability of thin film structures

Benefits of this technology:

* Thinner dielectric material layer allows for miniaturization of devices
* Specific composition range of HfAO improves electrical properties
* Increased performance and efficiency of thin film devices
* Enhanced stability and reliability of thin film structures


==Original Abstract Submitted==

A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfAOsatisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfAOis in a range of 0.3 to 0.5.



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