View source for 18446827. VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

=VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:In-Su Park of Icheon-si Gyeonggi-do (KR)|In-Su Park of Icheon-si Gyeonggi-do (KR)]][[Category:In-Su Park of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Jong-Gi Kim of Yongin-si Gyeonggi-do (KR)|Jong-Gi Kim of Yongin-si Gyeonggi-do (KR)]][[Category:Jong-Gi Kim of Yongin-si Gyeonggi-do (KR)]]

[[:Category:Hai-Won Kim of Icheon-si Gyeonggi-do (KR)|Hai-Won Kim of Icheon-si Gyeonggi-do (KR)]][[Category:Hai-Won Kim of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Hoe-Min Jeong of Seoul (KR)|Hoe-Min Jeong of Seoul (KR)]][[Category:Hoe-Min Jeong of Seoul (KR)]]

==VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18446827 titled 'VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE

==Simplified Explanation==

The abstract describes a vertical semiconductor device that includes a lower structure, a multi-layer stack structure, a vertical structure, a vertical source line, and a horizontal source channel contact.

* The lower structure serves as a foundation for the device.
* The multi-layer stack structure consists of a source layer and gate electrodes.
* The vertical structure penetrates the multi-layer stack structure and includes a channel layer that is insulated from the source layer.
* The vertical source line is spaced apart from the vertical structure and contacts the source layer.
* The horizontal source channel contact connects the source layer and the channel layer and includes two conductive layers with different dopants.

== Potential Applications ==
* This technology can be used in various electronic devices such as transistors, integrated circuits, and memory devices.
* It can be applied in the field of telecommunications, computing, and consumer electronics.

== Problems Solved ==
* The vertical semiconductor device solves the problem of efficient vertical integration of different layers in a semiconductor structure.
* It addresses the challenge of achieving proper electrical connections between the source layer and the channel layer.

== Benefits ==
* The vertical semiconductor device allows for compact and efficient integration of multiple layers, leading to improved performance and functionality.
* The use of different dopants in the horizontal source channel contact enhances the device's electrical properties and enables precise control over its operation.
* The technology offers potential cost savings in manufacturing processes due to its simplified structure and improved efficiency.


==Original Abstract Submitted==

A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.



[[Category:H10B43/27]]
[[Category:H01L23/535]]
[[Category:H01L23/532]]
[[Category:H01L21/285]]
[[Category:H01L21/768]]
[[Category:H10B41/27]]