View source for 18387801. DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Jun-De Jin of Hsinchu City (TW)|Jun-De Jin of Hsinchu City (TW)]][[Category:Jun-De Jin of Hsinchu City (TW)]]

==DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18387801 titled 'DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH

==Simplified Explanation==

**Explanation:**
The patent application discloses devices and methods for improving the insertion loss performance of an antenna switch. One example provided is a semiconductor device designed to function as an antenna switch. The device includes a substrate, a dielectric layer, and a polysilicon region.

**Bullet Points:**
* Semiconductor device designed for use as an antenna switch
* Includes substrate, dielectric layer, and polysilicon region
* Substrate consists of intrinsic substrate, metal-oxide-semiconductor device, and isolation feature
* Isolation feature is in contact with intrinsic substrate and positioned adjacent to the metal-oxide-semiconductor device

**Potential Applications:**
* Mobile devices
* Wireless communication systems
* Internet of Things (IoT) devices

**Problems Solved:**
* Improves insertion loss performance of antenna switches
* Enhances overall efficiency of wireless communication systems

**Benefits:**
* Better signal transmission quality
* Increased reliability of antenna switches
* Improved performance of electronic devices


==Original Abstract Submitted==

Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.



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