View source for 18236922. SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES simplified abstract (Applied Materials, Inc.)

=SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Chang Seok Kang of San Jose CA (US)|Chang Seok Kang of San Jose CA (US)]][[Category:Chang Seok Kang of San Jose CA (US)]]

[[:Category:Sung-Kwan Kang of San Jose CA (US)|Sung-Kwan Kang of San Jose CA (US)]][[Category:Sung-Kwan Kang of San Jose CA (US)]]

==SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18236922 titled 'SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES

==Simplified Explanation==

The memory cell array described in the patent application consists of multiple memory levels stacked in a vertical direction. Each memory level includes an active region, a cell transistor with a single gate above the active region, and a cell capacitor with a bottom electrode layer connected to the active region.

* Memory cell array with multiple stacked memory levels
* Each memory level has an active region
* Cell transistor with a single gate above the active region
* Cell capacitor with a bottom electrode layer connected to the active region

== Potential Applications ==
The technology described in this patent application could be applied in:
* Solid-state drives
* High-performance computing
* Data centers

== Problems Solved ==
This technology helps address the following issues:
* Increasing memory density
* Enhancing memory performance
* Improving data storage efficiency

== Benefits ==
The benefits of this technology include:
* Higher memory capacity
* Faster data access speeds
* More efficient data storage

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Memory chip manufacturing
* Electronics industry
* Semiconductor market

== Possible Prior Art ==
One possible prior art related to this technology is the use of stacked memory levels in memory cell arrays to increase memory density and performance.

=== Unanswered Questions ===

=== How does this technology compare to existing memory cell array designs in terms of power consumption? ===
This article does not provide information on the power consumption of the memory cell array compared to existing designs. 

=== What are the potential challenges in implementing this technology on a large scale in commercial products? ===
The article does not address the potential challenges that may arise when implementing this technology on a large scale in commercial products.


==Original Abstract Submitted==

A memory cell array includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including an active region, a cell transistor having a single gate above the active region in the first direction, and a cell capacitor having a bottom electrode layer that is electrically connected to the active region.



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