View source for 18186679. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Jae Ho Kim of Icheon-si Gyeonggi-do (KR)|Jae Ho Kim of Icheon-si Gyeonggi-do (KR)]][[Category:Jae Ho Kim of Icheon-si Gyeonggi-do (KR)]]

==SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18186679 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a source structure with a cell area and an edge area, a stack on the edge area, a gate structure on the cell area, a channel structure connected to the cell area through the gate structure, and a read-only memory area.

* Source structure with cell and edge areas
* Stack located on the edge area of the source structure
* Gate structure located on the cell area of the source structure
* Channel structure connected to the cell area through the gate structure
* Read-only memory area

== Potential Applications ==
The technology described in this patent application could be applied in the following areas:
* Memory devices
* Semiconductor manufacturing
* Integrated circuits

== Problems Solved ==
This technology helps address the following issues:
* Enhancing memory storage capacity
* Improving semiconductor device performance
* Increasing data processing speed

== Benefits ==
The benefits of this technology include:
* Higher efficiency in data storage
* Enhanced overall device performance
* Improved reliability and durability

== Potential Commercial Applications ==
The potential commercial applications of this technology could include:
* Memory chip manufacturing
* Consumer electronics
* Telecommunications industry

== Possible Prior Art ==
One possible prior art for this technology could be the development of similar semiconductor devices with different configurations in the past.

=== Unanswered Questions ===

=== How does this technology compare to existing memory devices in terms of speed and capacity? ===
This article does not provide a direct comparison with existing memory devices in terms of speed and capacity. Further research or testing may be needed to determine the exact performance differences.

=== What specific materials are used in the construction of the source structure and gate structure in this semiconductor device? ===
The article does not specify the exact materials used in the construction of the source structure and gate structure. Additional information on the materials could provide insights into the durability and performance of the device.


==Original Abstract Submitted==

A semiconductor device includes: a source structure comprising a cell area and an edge area; a stack located on the edge area of the source structure; a gate structure located on the cell area of the source structure; a channel structure connected to the cell area of the source structure by extending through the gate structure; and a read-only memory area.



[[Category:H10B20/00]]
[[Category:H01L23/528]]