View source for 18169514. LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

=LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE=


==Organization Name==

[[:Category:KABUSHIKI KAISHA TOSHIBA|KABUSHIKI KAISHA TOSHIBA]]


[[Category:KABUSHIKI KAISHA TOSHIBA]]

==Inventor(s)==

[[:Category:Keita Sasaki of Yokohama Kanagawa (JP)|Keita Sasaki of Yokohama Kanagawa (JP)]][[Category:Keita Sasaki of Yokohama Kanagawa (JP)]]

[[:Category:Mariko Shimizu of Setagaya Tokyo (JP)|Mariko Shimizu of Setagaya Tokyo (JP)]][[Category:Mariko Shimizu of Setagaya Tokyo (JP)]]

[[:Category:Kazuhiro Suzuki of Meguro Tokyo (JP)|Kazuhiro Suzuki of Meguro Tokyo (JP)]][[Category:Kazuhiro Suzuki of Meguro Tokyo (JP)]]

==LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18169514 titled 'LIGHT DETECTOR, LIGHT DETECTION SYSTEM, AND LIDAR DEVICE

==Simplified Explanation==

The abstract describes a light detector with a unique structure involving multiple semiconductor layers and a photoelectric conversion part.

* The light detector includes a substrate with a first semiconductor layer, an insulating layer, and a second semiconductor layer.
* The photoelectric conversion part within the second semiconductor layer consists of a first semiconductor region and a second semiconductor region.
* A void below the photoelectric conversion part and a trench surrounding it help optimize the performance of the detector.
* The photoelectric conversion part is electrically connected to the upper surface side of the substrate.

== Potential Applications ==
This technology can be applied in:
* Solar panels
* Photodetectors
* Imaging sensors

== Problems Solved ==
This technology helps in:
* Improving light detection efficiency
* Enhancing signal-to-noise ratio

== Benefits ==
The benefits of this technology include:
* Higher sensitivity to light
* Improved performance in low-light conditions

== Potential Commercial Applications ==
The potential commercial applications of this technology include:
* Consumer electronics
* Aerospace industry
* Medical devices

== Possible Prior Art ==
There is no prior art known at this time.

== Unanswered Questions ==

=== How does the size of the trench impact the performance of the light detector? ===
The abstract does not provide information on how the dimensions of the trench affect the functionality of the light detector.

=== What materials are used in the semiconductor layers of the light detector? ===
The abstract does not specify the exact materials used in the semiconductor layers of the light detector.


==Original Abstract Submitted==

A light detector according to one embodiment, includes a substrate. The substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. The insulating layer is located on the first semiconductor layer. The second semiconductor layer is located on the insulating layer. The second semiconductor layer includes a photoelectric conversion part. The photoelectric conversion part includes a first semiconductor region and a second semiconductor region. The substrate includes a void and a trench. The void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. The trench surrounds the photoelectric conversion part. A lower end of the trench is positioned in the second semiconductor layer. The photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.



[[Category:G01S7/481]]
[[Category:G01S17/08]]