View source for 18167354. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Minhyun Lee of Suwon-si (KR)|Minhyun Lee of Suwon-si (KR)]][[Category:Minhyun Lee of Suwon-si (KR)]]

[[:Category:Houk Jang of Cambridge MA (US)|Houk Jang of Cambridge MA (US)]][[Category:Houk Jang of Cambridge MA (US)]]

[[:Category:Donhee Ham of Cambridge MA (US)|Donhee Ham of Cambridge MA (US)]][[Category:Donhee Ham of Cambridge MA (US)]]

[[:Category:Chengye Liu of Cambridge MA (US)|Chengye Liu of Cambridge MA (US)]][[Category:Chengye Liu of Cambridge MA (US)]]

[[:Category:Henry Julian Hinton of Cambridge MA (US)|Henry Julian Hinton of Cambridge MA (US)]][[Category:Henry Julian Hinton of Cambridge MA (US)]]

[[:Category:Haeryong Kim of Seongnam-si (KR)|Haeryong Kim of Seongnam-si (KR)]][[Category:Haeryong Kim of Seongnam-si (KR)]]

[[:Category:Hyeonjin Shin of Suwon-si (KR)|Hyeonjin Shin of Suwon-si (KR)]][[Category:Hyeonjin Shin of Suwon-si (KR)]]

==NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18167354 titled 'NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

==Simplified Explanation==

The abstract describes a nonvolatile memory device that uses light to change and maintain the resistance value of a resistance switching layer. Here are the bullet points explaining the patent/innovation:

* The nonvolatile memory device consists of a resistance switching layer, a gate, a gate oxide layer, and a source and drain.
* The resistance switching layer's resistance value can be altered by illuminating it with light.
* The changed resistance value of the resistance switching layer is maintained even after the light is removed.
* The gate oxide layer acts as a barrier between the resistance switching layer and the gate.
* The source and drain are positioned on the resistance switching layer but are spaced apart from each other.

Potential applications of this technology:

* Nonvolatile memory devices that can be programmed and erased using light.
* Memory devices that can store data even when power is lost.
* High-speed data storage and retrieval systems.

Problems solved by this technology:

* Overcoming the limitations of traditional nonvolatile memory devices that require electrical programming and erasing.
* Providing a more efficient and reliable method for changing and maintaining resistance values in memory devices.

Benefits of this technology:

* Faster programming and erasing of memory devices.
* Lower power consumption compared to traditional nonvolatile memory devices.
* Increased reliability and durability of memory devices.


==Original Abstract Submitted==

A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.



[[Category:H10N70/00]]
[[Category:H10B63/00]]