View source for 18158086. Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Yi Yang of Fremont CA (US)|Yi Yang of Fremont CA (US)]][[Category:Yi Yang of Fremont CA (US)]]

[[:Category:Dongna Shen of San Jose CA (US)|Dongna Shen of San Jose CA (US)]][[Category:Dongna Shen of San Jose CA (US)]]

[[:Category:Yu-Jen Wang of San Jose CA (US)|Yu-Jen Wang of San Jose CA (US)]][[Category:Yu-Jen Wang of San Jose CA (US)]]

==Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18158086 titled 'Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices

==Simplified Explanation==

The abstract describes a magnetic tunneling junction (MTJ) structure that includes various layers and electrodes to prevent shorting between metal re-deposition layers. Here are the bullet points explaining the patent/innovation:

* The MTJ structure consists of a pinned layer, a barrier layer, a second metal re-deposition layer, a free layer, a top electrode, and dielectric spacers.
* The pinned layer is located on a bottom electrode, and the barrier layer is on top of the pinned layer.
* The second metal re-deposition layer is present on the sidewalls of both the barrier layer and the pinned layer.
* The free layer is positioned on the barrier layer and has a smaller width compared to the pinned layer.
* The top electrode, having the same width as the free layer, is placed on top of the free layer.
* Sidewalls of the free layer and top electrode are covered with a first metal re-deposition layer.
* Dielectric spacers are added to the sidewalls of the free layer and top electrode, covering the first metal re-deposition layer.
* The combination of the free layer, top electrode, and dielectric spacers has the same width as the pinned layer.
* The dielectric spacers serve the purpose of preventing shorting between the first and second metal re-deposition layers.

Potential applications of this technology:

* Magnetic storage devices (e.g., hard disk drives)
* Magnetic random-access memory (MRAM)
* Magnetic sensors
* Spintronics-based devices

Problems solved by this technology:

* Preventing shorting between metal re-deposition layers in the MTJ structure
* Ensuring proper functionality and reliability of the MTJ structure

Benefits of this technology:

* Improved performance and reliability of magnetic tunneling junction structures
* Enhanced data storage capabilities
* Increased efficiency and accuracy of magnetic sensors
* Enables the development of more advanced spintronics-based devices.


==Original Abstract Submitted==

A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers.



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