View source for 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Minhyun Lee of Suwon-si (KR)|Minhyun Lee of Suwon-si (KR)]][[Category:Minhyun Lee of Suwon-si (KR)]]

[[:Category:Minsu Seol of Suwon-si (KR)|Minsu Seol of Suwon-si (KR)]][[Category:Minsu Seol of Suwon-si (KR)]]

[[:Category:Yeonchoo Cho of Seongnam-si (KR)|Yeonchoo Cho of Seongnam-si (KR)]][[Category:Yeonchoo Cho of Seongnam-si (KR)]]

[[:Category:Hyeonjin Shin of Suwon-si (KR)|Hyeonjin Shin of Suwon-si (KR)]][[Category:Hyeonjin Shin of Suwon-si (KR)]]

==VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18157478 titled 'VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME

==Simplified Explanation==

The abstract describes a patent application for a vertical type transistor that includes various layers and a channel layer made of a 2D semiconductor. 

* The transistor has a substrate, first and second source/drain electrode layers, and a first gate electrode layer.
* A first gate insulating film passes through the first gate electrode layer.
* A hole passes through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer.
* A first channel layer is provided on the lateral side of the hole and may be made of a 2D semiconductor.

Potential applications of this technology:

* Integrated circuits
* Electronic devices
* Transistors in various industries

Problems solved by this technology:

* Improved performance and efficiency of transistors
* Enhanced integration of components in integrated circuits
* Better control of electrical current flow

Benefits of this technology:

* Higher performance and efficiency in electronic devices
* Increased functionality and miniaturization of integrated circuits
* Improved reliability and stability of transistors


==Original Abstract Submitted==

A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.



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