View source for 18156625. ANTI-FUSE DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=ANTI-FUSE DEVICE AND METHOD=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Min-Shin Wu of Hsinchu (TW)|Min-Shin Wu of Hsinchu (TW)]][[Category:Min-Shin Wu of Hsinchu (TW)]]

[[:Category:Meng-Sheng Chang of Hsinchu (TW)|Meng-Sheng Chang of Hsinchu (TW)]][[Category:Meng-Sheng Chang of Hsinchu (TW)]]

[[:Category:Shao-Yu Chou of Hsinchu (TW)|Shao-Yu Chou of Hsinchu (TW)]][[Category:Shao-Yu Chou of Hsinchu (TW)]]

[[:Category:Yao-Jen Yang of Hsinchu (TW)|Yao-Jen Yang of Hsinchu (TW)]][[Category:Yao-Jen Yang of Hsinchu (TW)]]

==ANTI-FUSE DEVICE AND METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18156625 titled 'ANTI-FUSE DEVICE AND METHOD

==Simplified Explanation==

The patent application describes an integrated circuit (IC) device that includes various components and structures for electrical connection and functionality. 

* The IC device has an active area located in a substrate.
* There are first and second contact structures that are positioned above the active area and are electrically connected to it.
* A conductive element is present above and connected to both the first and second contact structures.
* An anti-fuse transistor device is included, which consists of a dielectric layer positioned between a gate structure and the active area.
* Additionally, there is a first selection transistor located adjacent to both the anti-fuse transistor device and the first contact structure.
* Similarly, a second selection transistor is present adjacent to both the anti-fuse transistor device and the second contact structure.

Potential applications of this technology:
* Integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
* Memory devices, such as non-volatile memory or programmable logic devices.

Problems solved by this technology:
* Provides a compact and efficient design for an IC device.
* Enables effective electrical connection and functionality between different components of the IC device.
* Facilitates the integration of anti-fuse transistor devices and selection transistors in a single IC device.

Benefits of this technology:
* Improved performance and functionality of integrated circuits.
* Enhanced reliability and durability of the IC device.
* Enables miniaturization and cost reduction in the manufacturing process of IC devices.


==Original Abstract Submitted==

An IC device includes an active area positioned in a substrate, first and second contact structures overlying and electrically connected to the active area, a conductive element overlying and electrically connected to each of the first and second contact structures, an anti-fuse transistor device including a dielectric layer between a gate structure and the active area, a first selection transistor overlying the active area adjacent to each of the anti-fuse transistor device and the first contact structure, and a second selection transistor overlying the active area adjacent to each of the anti-fuse transistor device and the second contact structure.



[[Category:H10B20/20]]
[[Category:G11C17/18]]
[[Category:G11C17/16]]