View source for 18155932. FOUR CPP WIDE MEMORY CELL WITH BURIED POWER GRID, AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=FOUR CPP WIDE MEMORY CELL WITH BURIED POWER GRID, AND METHOD OF FABRICATING SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Hidehiro Fujiwara of Hsinchu (TW)|Hidehiro Fujiwara of Hsinchu (TW)]][[Category:Hidehiro Fujiwara of Hsinchu (TW)]]

[[:Category:Chih-Yu Lin of Hsinchu (TW)|Chih-Yu Lin of Hsinchu (TW)]][[Category:Chih-Yu Lin of Hsinchu (TW)]]

[[:Category:Yen-Huei Chen of Hsinchu (TW)|Yen-Huei Chen of Hsinchu (TW)]][[Category:Yen-Huei Chen of Hsinchu (TW)]]

[[:Category:Wei-Chang Zhao of Hsinchu (TW)|Wei-Chang Zhao of Hsinchu (TW)]][[Category:Wei-Chang Zhao of Hsinchu (TW)]]

[[:Category:Yi-Hsin Nien of Hsinchu (TW)|Yi-Hsin Nien of Hsinchu (TW)]][[Category:Yi-Hsin Nien of Hsinchu (TW)]]

==FOUR CPP WIDE MEMORY CELL WITH BURIED POWER GRID, AND METHOD OF FABRICATING SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18155932 titled 'FOUR CPP WIDE MEMORY CELL WITH BURIED POWER GRID, AND METHOD OF FABRICATING SAME

==Simplified Explanation==

The abstract describes a memory device that includes various structures and components for efficient data storage and retrieval. Here is a simplified explanation of the abstract:

* The memory device consists of active regions and gate structures, where each gate structure is connected to a specific portion of an active region.
* Contact-to-transistor-component structures (MD structures) are positioned over another portion of the active regions, with one MD structure placed between adjacent gate structures.
* Via-to-gate/MD (VGD) structures are located over the corresponding gate electrode and MD structure, providing a connection between them.
* Conductive segments are present over and electrically connected to each VGD structure, facilitating the flow of electrical signals.
* Buried contact-to-transistor-component structures (BVD) structures are positioned beneath a third portion of the active regions.
* Buried conductive segments are located under each BVD structure, serving as additional electrical connections.

Potential applications of this technology:

* Memory devices in electronic devices such as smartphones, tablets, and computers.
* Storage systems in data centers and servers.
* Embedded memory in various electronic components.

Problems solved by this technology:

* Efficient data storage and retrieval in memory devices.
* Enhanced connectivity between different components of the memory device.
* Optimization of space utilization within the memory device.

Benefits of this technology:

* Improved performance and speed of memory devices.
* Higher storage capacity in a compact form factor.
* Enhanced reliability and durability of the memory device.


==Original Abstract Submitted==

A memory device includes active regions and gate structures, each of the gate structures is electrically coupled to a first portion of a corresponding active region of the active regions. The memory device includes contact-to-transistor-component structures (MD structures), each of the MD structures is over a second portion of a corresponding active region, and a first MD structure is between adjacent gate structures. The memory device includes via-to-gate/MD (VGD) structures, each of the VGD structures is over to a corresponding gate electrode and MD structure. The memory device includes conductive segments, each of the conductive segments is over and electrically coupled to a corresponding VGD structure. The memory device includes buried contact-to-transistor-component structures (BVD) structures, each of the BVD structures is under a third portion of a corresponding active region. The memory device includes buried conductive segments, each of the buried conductive segments is under a corresponding BVD structure.



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