View source for 18155912. SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Harry-Haklay Chuang of Zhubei City (TW)|Harry-Haklay Chuang of Zhubei City (TW)]][[Category:Harry-Haklay Chuang of Zhubei City (TW)]]

[[:Category:Shiang-Hung Huang of New Taipei City (TW)|Shiang-Hung Huang of New Taipei City (TW)]][[Category:Shiang-Hung Huang of New Taipei City (TW)]]

[[:Category:Hsin Fu Lin of Hsinchu County (TW)|Hsin Fu Lin of Hsinchu County (TW)]][[Category:Hsin Fu Lin of Hsinchu County (TW)]]

==SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18155912 titled 'SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME

==Simplified Explanation==

The present disclosure provides a semiconductor device with a via, insulating structure, and doped region in the peripheral area of the substrate.

* The semiconductor device includes a substrate with a device area and a peripheral area.
* A via is disposed in the peripheral area and extends partially through the substrate.
* An insulating structure surrounds the via and extends partially through the substrate.
* A doped region is located in the peripheral area, over or in the substrate, adjacent to the via.

== Potential Applications ==
This technology could be applied in:
* Semiconductor manufacturing
* Integrated circuit design
* Electronic device production

== Problems Solved ==
This technology helps in:
* Improving the performance of semiconductor devices
* Enhancing the reliability of integrated circuits
* Reducing signal interference in electronic devices

== Benefits ==
The benefits of this technology include:
* Increased efficiency in semiconductor manufacturing
* Enhanced functionality of integrated circuits
* Improved overall performance of electronic devices

== Potential Commercial Applications ==
Optimizing Semiconductor Device Structure for Enhanced Performance

== Possible Prior Art ==
There is no known prior art for this specific semiconductor device structure.

== Unanswered Questions ==
=== How does this semiconductor device compare to existing technologies in terms of performance and reliability? ===
This article does not provide a direct comparison with existing technologies to evaluate performance and reliability.

=== What are the specific manufacturing processes involved in creating this semiconductor device? ===
The article does not detail the specific manufacturing processes used to create this semiconductor device.


==Original Abstract Submitted==

The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate having a device area and a peripheral area surrounding the device area; a via, disposed at the peripheral area and extending at least partially through the substrate; an insulating structure, disposed at the peripheral area, extending at least partially through the substrate and surrounding the via; and a doped region, disposed at the peripheral area, over or in the substrate and adjacent to the via.



[[Category:H01L23/48]]
[[Category:H01L21/762]]
[[Category:H01L21/768]]
[[Category:H01L23/522]]