View source for 18154540. SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Ting-Li Yang of Tainan City (TW)|Ting-Li Yang of Tainan City (TW)]][[Category:Ting-Li Yang of Tainan City (TW)]]

[[:Category:Wei-Li Huang of Pingtung City (TW)|Wei-Li Huang of Pingtung City (TW)]][[Category:Wei-Li Huang of Pingtung City (TW)]]

[[:Category:Sheng-Pin Yang of Kaohsiung City (TW)|Sheng-Pin Yang of Kaohsiung City (TW)]][[Category:Sheng-Pin Yang of Kaohsiung City (TW)]]

[[:Category:Chi-Cheng Chen of Tainan City (TW)|Chi-Cheng Chen of Tainan City (TW)]][[Category:Chi-Cheng Chen of Tainan City (TW)]]

[[:Category:Hon-Lin Huang of Hsinchu City (TW)|Hon-Lin Huang of Hsinchu City (TW)]][[Category:Hon-Lin Huang of Hsinchu City (TW)]]

[[:Category:Chin-Yu Ku of Hsinchu City (TW)|Chin-Yu Ku of Hsinchu City (TW)]][[Category:Chin-Yu Ku of Hsinchu City (TW)]]

[[:Category:Chen-Shien Chen of Zhubei City (TW)|Chen-Shien Chen of Zhubei City (TW)]][[Category:Chen-Shien Chen of Zhubei City (TW)]]

==SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18154540 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP

==Simplified Explanation==

The patent application describes a semiconductor device structure that includes a first conductive line over a substrate. The structure also includes a first protection cap made of a different conductive material, which covers the end portion of the first conductive line and exposes a peripheral region of its top surface. A first photosensitive dielectric layer is present over the substrate, the first conductive line, and the first protection cap. Additionally, a conductive via structure passes through the first photosensitive dielectric layer and is connected to the first protection cap.

* The semiconductor device structure includes a first conductive line and a first protection cap made of different conductive materials.
* The first protection cap covers the end portion of the first conductive line and exposes a peripheral region of its top surface.
* A first photosensitive dielectric layer is present over the substrate, the first conductive line, and the first protection cap.
* A conductive via structure passes through the first photosensitive dielectric layer and is connected to the first protection cap.

== Potential Applications ==
* This semiconductor device structure can be used in various electronic devices, such as integrated circuits and microprocessors.
* It can be applied in the manufacturing of memory chips, logic circuits, and other semiconductor components.

== Problems Solved ==
* The use of different conductive materials for the first conductive line and the first protection cap helps to improve the overall performance and reliability of the semiconductor device structure.
* The exposed peripheral region of the first conductive line's top surface allows for better connectivity and integration with other components.

== Benefits ==
* The use of different conductive materials for the first conductive line and the first protection cap helps to reduce resistance and improve signal transmission.
* The exposed peripheral region of the first conductive line's top surface allows for easier connection to other components, enhancing the overall functionality of the semiconductor device structure.


==Original Abstract Submitted==

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the end portion. The first protection cap and the first conductive line are made of different conductive materials, and the first protection cap exposes a peripheral region of a top surface of the end portion. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap.



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