View source for 18150861. Volume-less Fluorine Incorporation Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=Volume-less Fluorine Incorporation Method=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Hsueh-Ju Chen of Taipei City (TW)|Hsueh-Ju Chen of Taipei City (TW)]][[Category:Hsueh-Ju Chen of Taipei City (TW)]]

[[:Category:Chi On Chui of Hsinchu (TW)|Chi On Chui of Hsinchu (TW)]][[Category:Chi On Chui of Hsinchu (TW)]]

[[:Category:Tsung-Da Lin of Hsinchu (TW)|Tsung-Da Lin of Hsinchu (TW)]][[Category:Tsung-Da Lin of Hsinchu (TW)]]

[[:Category:Pei Ying Lai of Hsinchu (TW)|Pei Ying Lai of Hsinchu (TW)]][[Category:Pei Ying Lai of Hsinchu (TW)]]

[[:Category:Chia-Wei Hsu of Taipei City (TW)|Chia-Wei Hsu of Taipei City (TW)]][[Category:Chia-Wei Hsu of Taipei City (TW)]]

==Volume-less Fluorine Incorporation Method - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18150861 titled 'Volume-less Fluorine Incorporation Method

==Simplified Explanation==

The method described in the patent application involves a process for treating gate dielectric layers in semiconductor devices.

* Removing a dummy gate stack to create a trench between gate spacers
* Depositing a gate dielectric material into the trench
* Performing a first treatment process using a fluorine-containing gas on the gate dielectric
* Performing a first drive-in process to drive fluorine into the gate dielectric
* Performing a second treatment process using the fluorine-containing gas on the gate dielectric
* Performing a second drive-in process to further drive fluorine into the gate dielectric
* Forming conductive layers to fill the trench after the second drive-in process

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### Potential Applications
* Semiconductor manufacturing
* Integrated circuit fabrication

### Problems Solved
* Improving gate dielectric properties
* Enhancing device performance
* Increasing device reliability

### Benefits
* Enhanced gate dielectric quality
* Improved device functionality
* Increased device longevity


==Original Abstract Submitted==

A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.



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