View source for 18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Te-Hsin Chiu of Miaoli County (TW)|Te-Hsin Chiu of Miaoli County (TW)]][[Category:Te-Hsin Chiu of Miaoli County (TW)]]

[[:Category:Kam-Tou Sio of Zhubei City (TW)|Kam-Tou Sio of Zhubei City (TW)]][[Category:Kam-Tou Sio of Zhubei City (TW)]]

[[:Category:Jiann-Tyng Tzeng of Hsinchu City (TW)|Jiann-Tyng Tzeng of Hsinchu City (TW)]][[Category:Jiann-Tyng Tzeng of Hsinchu City (TW)]]

==FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18149128 titled 'FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

==Simplified Explanation==

The abstract describes a semiconductor device that includes a semiconductor substrate, two fins protruding from the substrate, and two epitaxial source/drain regions. These regions are laterally spaced apart by an air void.

* The semiconductor device includes a semiconductor substrate.
* The device has two fins protruding from the substrate.
* The fins extend along a first direction.
* There are two epitaxial source/drain regions coupled to the fins.
* The source/drain regions are laterally spaced apart by an air void.

Potential Applications:
* This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
* It can be utilized in the manufacturing of integrated circuits and microprocessors.

Problems Solved:
* The device solves the problem of reducing the size and increasing the efficiency of semiconductor devices.
* It addresses the need for improved performance and functionality in electronic devices.

Benefits:
* The semiconductor device allows for better heat dissipation due to the air void between the source/drain regions.
* It enables higher performance and faster processing speeds.
* The device offers improved power efficiency and reduced energy consumption.


==Original Abstract Submitted==

A semiconductor device includes a semiconductor substrate. The semiconductor device includes a first fin protruding from the semiconductor substrate and extending along a first direction. The semiconductor device includes a second fin protruding from the semiconductor substrate and extending along the first direction. A first epitaxial source/drain region coupled to the first fin and a second epitaxial source/drain region coupled to the second fin are laterally spaced apart from each other by an air void.



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